CO2 drying after release of micromachined devices
5:1 reducing stepper
To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -
Substrates in clean category: Pre-Diffusion Clean
For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
No resist allowed. Resist should have been removed at the wbclean_res-piranha.
Resist should have been removed
Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.
Manual wet etching of non-standard materials. Hot plate available. GaAs allowed in personal labware only.
Isotropic Si etching; can be used for backside Si removal on small pieces
reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance
Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Ã
Direct Write
