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Quartz

Chemical Formula:

SiO2

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Wet Bench Solvent Lithography lithosolv	Lithography Solvent Bench Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual solvent cleaning of substrates or masks. Teflon coated metal tweezers cleaning.
Karl Suss MA-6 Contact Aligner karlsuss	Contact Aligner Karl Suss MA-6 Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align, including IR.
Karl Suss MA-6 Contact Aligner karlsuss2	Contact Aligner Karl Suss MA-6 Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align.
Woollam woollam	Woollam Training	All	SNF Cleanroom Paul G Allen L107
Headway Manual Resist Spinner headway2	Resist Coat (manual) Headway Manual Training	All	SNF Cleanroom Paul G Allen L107	Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
First Nano carbon nanotube CVD furnace cvd-nanotube	cvd-nanotube training	Flexible	SNF Exfab Paul G Allen L119 Año Nuevo	Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Finetech Lambda flipchipbonder	Flip Chip Bonder Training	Flexible	SNF Exfab Paul G Allen 104 Stinson
EVG 101 Spray Coater evgspraycoat	Spray Coater EVG 101 Training	All	SNF Cleanroom Paul G Allen L107	Spray coating of resists
EVG Contact Aligner evalign	Contact Aligner EVG Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Anodic Bond, backside align, including IR.
DISCO Wafer Saw DISCO wafersaw	Wafersaw DISCO training	Flexible	SNF Exfab Paul G Allen 159 Capitola
Critical Point Dryer Tousimis Automegasamdri-936 cpd	Critical Point Dryer Training	Flexible	SNF Cleanroom Paul G Allen L107	CO2 drying after release of micromachined devices
Oven BlueM 200°C to 430°C bluem	Blue M Oven Training	Flexible	SNF Cleanroom Paul G Allen L107	Convection in N2. Cure. Programmable.
ASML PAS 5500/60 i-line Stepper asml	Stepper ASML PAS 5500/60 i-line Training	All	SNF Cleanroom Paul G Allen L107	5:1 reducing stepper
Profilometer Alphastep 500 alphastep	Alphastep 500 Profilometer Training	Flexible	SNF Exfab Paul G Allen 104 Stinson	500Å to 300µm
RTA AllWin 610 aw610_l	AllWin 610 RTA Training	Clean	SNF Cleanroom Paul G Allen L107
RTA AllWin 610 aw610_r	AllWin 610 RTA Training	Flexible	SNF Cleanroom Paul G Allen L107
Oven 110°C post-bake oven110	Resist Postbake Oven 110°C Training	All	SNF Cleanroom Paul G Allen L107	Bakes wafers with resist after the development, called post-bake.
Oven 90°C prebake oven90	Resist Prebake Oven 90°C Training	All	SNF Cleanroom Paul G Allen L107	Bakes wafers after resist coating.
AJA2 Evaporator aja2-evap	Evaporator AJA2 Training	Flexible	SNF Cleanroom Paul G Allen L107	For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
Aixtron MOCVD - III-V system aix200	MOCVD - III-V Aixtron training	Flexible	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.

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Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Developer	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Clean			25.00 Å - 2.00 μm	SiO₂		300 °C - 500 °C		N₂ O₂ PH₃ SiH₄	4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	Si3N4 SiON		420 °C - 800 °C		NH₃ DCS	4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	SiO₂		420 °C - 630 °C		N₂ O₂ Si(OC₂H₅)₄	4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	Si Poly Silicon		420 °C - 630 °C		B₂H₆ GeH₄ N₂ PH₃ SiH₄	4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 3 Tube 9 B3T9 Clean Oxide	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	SiO₂		400 °C - 1100 °C		4% H₂ in N₂ N₂ O₂	4" 6"	(Si) , (SiGe) , (SiO2)	100
Wet Bench Clean 1 wbclean-1	Cleaning > Pre-Diffusion Clean Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean Wet Chemical Processing		Clean							50:1 HF SC1 SC2		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25
Wet Bench Clean 2 wbclean-2	Cleaning > Pre-Diffusion Clean Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean Wet Chemical Processing		Clean							50:1 HF 6:1 BOE SC1 SC2		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25
Wet Bench Clean_res- hotphos wbclean_res-hotphos	Etching > Wet Etching > Silicon Nitride Wet Etching Wet Chemical Processing		Clean	Si3N4								3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Clean_res-hf wbclean_res-hf	Etching > Wet Etching > Silicon Oxide Wet Etching Wet Chemical Processing		Clean	SiO₂						20:1 BOE 50:1 HF 6:1 BOE		3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Clean_res-piranha wbclean_res-piranha	Cleaning > Piranha Cleaning Wet Chemical Processing Cleaning > Resist Removal > Wet Resist Removal		Clean							9:1 Piranha		3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench CMOS Metal wbclean3	Etching > Wet Etching > Aluminum and Titanium and Tungsten Wet Etching Wet Chemical Processing		Semiclean	Al Ti W						20:1 BOE 50:1 HF 6:1 BOE Al-Etch Ti-Etch W-etch		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25 wafers
Wet Bench Decontamination wbdecon	Cleaning > Decontamination Wet Chemical Processing		Clean							SC2		3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Flexcorr 1 wbflexcorr-1	Etching > Wet Etching > Acid or Base Wet Etching Etching > Wet Etching > Aluminum and Titanium and Tungsten Wet Etching Cleaning > Decontamination Cleaning > Metal Clean Cleaning > Piranha Cleaning Etching > Wet Etching > Silicon Oxide Wet Etching Etching > Wet Etching > Silicon Wet Etching Wet Chemical Processing Cleaning > Resist Removal > Wet Resist Removal		Flexible	Metals Al Au Cr Si SiO₂ Resist	GaAs Si3N4 Ti W					Acids Bases Gold Etchant 20:1 BOE 50:1 HF 6:1 BOE 9:1 Piranha Al-Etch Chrome Etch KOH SC1 SC2		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)
Wet Bench Flexcorr 2 wbflexcorr-2	Etching > Wet Etching > Acid or Base Wet Etching Cleaning > Piranha Cleaning Wet Chemical Processing		Flexible							Acids Bases		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)
Wet Bench Flexcorr 3 wbflexcorr-3	Etching > Wet Etching > Acid or Base Wet Etching Cleaning > Piranha Cleaning Wet Chemical Processing		Flexible							Acids Bases		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various)
Wet Bench Flexible Solvents wbflexsolv	Patterning > Metal Lift-off Cleaning > Solvent Cleaning Cleaning > Resist Removal > Wet Resist Removal		Flexible							Solvents		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)
Wet Bench Flexible Solvents 1 wbflexsolv-1	Cleaning > Solvent Cleaning Wet Chemical Processing Cleaning > Resist Removal > Wet Resist Removal		Flexible							Solvents		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)
Wet Bench Flexible Solvents 2 wbflexsolv-2	Cleaning > Solvent Cleaning Wet Chemical Processing Cleaning > Resist Removal > Wet Resist Removal		Flexible							Solvents		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)
Wet Bench Miscellaneous wbmiscres	Photolithography > Resist Develop > Resist Develop (manual) Wet Chemical Processing		Flexible					AZ 1:1		Developers		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Wet Bench Resist Strip wbresstrip-1	Wet Chemical Processing Cleaning > Resist Removal > Wet Resist Removal		Clean (Ge), Semiclean, Flexible	Resist					20 °C - 60 °C	PRS-1000 SRS-100		Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC)	25 4 inch wafers

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