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Quartz

Chemical Formula:

SiO2

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Wet Bench Flexible Solvents 2 wbflexsolv-2	Wet Bench Flexible Solvents 1 and 2 Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual solvent cleaning, hot plate
Wet Bench Flexcorr 1 wbflexcorr-1	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual wet etching of non-standard materials. Hot plate available. GaAs allowed in personal labware only.
Wet Bench Flexcorr 2 wbflexcorr-2	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual wet etching of non-standard materials. Hot pots available. GaAs allowed in personal labware only
Wet Bench Flexcorr 3 wbflexcorr-3	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual wet etching of non-standard materials using acids or bases. Hot Plate available. GaAs not allowed.
Wet Bench CMOS Metal wbclean3	Wet Bench CMOS Metal (wbclean3) Training	Semiclean	SNF Cleanroom Paul G Allen L107	Al, Ti, or W wet etching or oxide etching
Wet Bench Clean_res-hf wbclean_res-hf	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF Cleanroom Paul G Allen L107	Resist as mask allowed
Wet Bench Clean_res-piranha wbclean_res-piranha	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF Cleanroom Paul G Allen L107	Resist will be removed
Wet Bench Clean_res- hotphos wbclean_res-hotphos	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF Cleanroom Paul G Allen L107	Resist should have been removed
Tencor P2 Profilometer p2	Tencor P2 Profilometer Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Step height measurement range 500 Å to 80 µm
SVG Develop Track 1 svgdev	SVG Resist Develop tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic development.
SVG Develop Track 2 svgdev2	SVG Resist Develop tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic development.
SVG Resist Coat Track 2 svgcoat2	SVG Resist Coat Tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.
SVG Resist Coat Track 1 svgcoat	SVG Resist Coat Tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic Resist spinning and bake
SPTS uetch vapor etch uetch	SPTS uetch vapor etch Training	All	SNF Cleanroom Paul G Allen L107	Pieces need a carrier wafer; Isotropic Etching
Prometrix Resistivity Mapping System prometrix	Prometrix Training	All	SNF Cleanroom Paul G Allen L107	3 Probe Heads for different cleanliness groups.
PlasmaTherm Shuttlelock PECVD System ccp-dep	PlasmaTherm Shuttlelock PECVD System Training	All	SNF Cleanroom Paul G Allen L107	To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Oxford Dielectric Etcher oxford-rie	Oxford Dielectric Etcher Training	Flexible	SNF Cleanroom Paul G Allen L107	4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers
Nanospec 210XP nanospec2	Nanospec Training	All	SNF Exfab Paul G Allen 104 Stinson	Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Ã
micromanipulator6000 IV-CV probe station micromanipulator6000	micromanipulator6000 IV-CV probe station Training	All	SNF Exfab Paul G Allen 151 Ocean
Matrix Plasma Resist Strip matrix	Matrix Plasma Resist Strip Training	Flexible	SNF Cleanroom Paul G Allen L107	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.

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Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Resist	Developer	Process Temperature Range	Gases	Sample Size Limits	Substrate Size	Substrate Type	Maximum Load
RTA AllWin 610 aw610_l	Annealing & Oxidation > Rapid Thermal Annealing	Pre-Diffusion Clean	Clean							21 °C - 1150 °C	4% H₂ in N₂ Ar N₂ NH₃ O₂		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	1 wafer
RTA AllWin 610 aw610_r	Annealing & Oxidation > Rapid Thermal Annealing		Flexible							21 °C - 1150 °C	4% H₂ in N₂ Ar N₂ NH₃ O₂		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)
Samco PC300 Plasma Etch System samco	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI					20 ºC	CF₄ O₂ SF₆		Pieces 2" 3" 4" 6" 8" Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	Four 4" wafers or two 6" wafers and one 8" wafer
Savannah ALD savannah	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD		Flexible			1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia			24 °C - 250 °C	N₂		Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
SEM -Zeiss Merlin sem-merlin	Characterization > Surface Analysis > Microscopy		All			0.00 mm - 35.00 mm						6 in wafer	Pieces 2" 3" 4" 6" Disks	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb)
Sensofar S-neox s-neox	Characterization > Surface Analysis > Profilometer > Interferometry Characterization > Surface Analysis > Profilometer > Optical Profilometer		All										Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
SPTS uetch vapor etch uetch	Etching > Vapor Etching		All	SiO₂							C₂H₅OH HF vapor		Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1
SVG Develop Track 1 svgdev	Photolithography > Resist Develop > Resist Develop (automatic)		All						MF-26A developer				4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Develop Track 2 svgdev2	Photolithography > Resist Develop > Resist Develop (automatic)		All						MF-26A developer				4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Resist Coat Track 1 svgcoat	Photolithography > Resist coat > Resist Coat (automatic)		All					Shipley 3612 resist SPR220-3 resist SPR220-7					4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Resist Coat Track 2 svgcoat2	Photolithography > Resist coat > Resist Coat (automatic)		All					AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist					4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
Technics Asher technics	Etching > Dry Etching Cleaning > Resist Removal > Dry Resist Removal		Flexible	Resist	dimethylpolysiloxane poly(p-xylylene) PI						O₂		Pieces 4" 6" 8"	(Si) , (SiO2) , (SiO₂)	Four 4" wafers to pieces, one 6" or 8" wafer
Tencor P2 Profilometer p2	Characterization > Surface Analysis > Profilometer > Step Profile		Clean, Semiclean										Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Tystar Bank 1 Tube 1 Anneal B1T1 Flexible Oxide	Annealing & Oxidation > Oxide Growth (furnace)		Flexible			25.00 Å - 2.00 μm				400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide	Annealing & Oxidation > Annealing (furnace) Annealing & Oxidation > Oxide Growth (furnace)		Flexible			25.00 Å - 2.00 μm	SiO₂			400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Flexible			25.00 Å - 2.00 μm	Ge Si SiGe Poly Silicon			420 °C - 630 °C	B₂H₆ GeH₄ N₂ PH₃ SiH₄		4" 6"	(Si) , (SiGe) , (SiO2) , (Ge) , (SiC) , (III-V)	100
Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Flexible			25.00 Å - 2.00 μm	SiO₂			300 °C - 500 °C	N₂ O₂ PH₃ SiH₄		4" 6"	(Si) , (SiGe) , (SiO2) , (Ge) , (SiC) , (III-V)	100
Tystar Bank 2 Tube 5 B2T5 Clean Anneal	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm				400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	SiO₂			400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 2 Tube 7 Nitride B2T7 Clean Nitride	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	Si3N4 SiON			420 °C - 800 °C	NH₃ DCS		4" 6"	(Si) , (SiGe) , (SiO2)	50

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