N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
For more than 300nm deposition, please contact staff in advance.
reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Manual solvent cleaning of substrates or masks. Teflon coated metal tweezers cleaning.
Bakes wafers with resist after the development, called post-bake.
No resist allowed. Resist should have been removed at the wbclean_res-piranha
Resist will be removed
Bakes wafers after resist coating.
Automatic development.
