N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Manual wet etching of non-standard materials. Hot pots available. GaAs allowed in personal labware only
4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers
For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance
Al, Ti, or W wet etching or oxide etching
Automatic development.
non contact 3D optical profiling
Manual development of resist in beakers and Headway (manual resist spinner). SNF approved developers (acid or base). No solvents!
