N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
Bakes wafers after resist coating.
Bakes wafers with resist after the development, called post-bake.
500Å to 300µm
5:1 reducing stepper
Convection in N2. Cure. Programmable.
CO2 drying after release of micromachined devices
Spray coating of resists
Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
1:1 Contact Aligner. Backside align.
