CO2 drying after release of micromachined devices
For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance
5:1 reducing stepper
For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
