CO2 drying after release of micromachined devices
Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.
Isotropic Si etching; can be used for backside Si removal on small pieces
non contact 3D optical profiling
4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers
reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance