reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Isotropic Si etching; can be used for backside Si removal on small pieces
Automatic development.
Automatic Resist spinning and bake
Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.
Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Pieces need a carrier wafer; Isotropic Etching
Two programs: Singe and HMDS prime or Singe only. No Resist allowed!
To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -
Substrates in clean category: Pre-Diffusion Clean
For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
