N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Two programs: Singe and HMDS prime or Singe only. No Resist allowed!
Direct Write
For LOL2000 bake or bakes which are not allowed in the other ovens and need higher temperatures, up to 200C, programmable.
Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Convection in N2. Cure. Programmable.
Bakes wafers with resist after the development, called post-bake.
Manual wet etching of non-standard materials. Hot plate available. GaAs allowed in personal labware only.
Bakes wafers after resist coating.
Manual wet etching of non-standard materials. Hot pots available. GaAs allowed in personal labware only
1:1 Contact Aligner. Backside align.
