N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Manual solvent cleaning, hot plate
non contact 3D optical profiling
Manual solvent cleaning of substrates or masks. Teflon coated metal tweezers cleaning.
Manual solvent cleaning of substrates or resist removal.
3 Probe Heads for different cleanliness groups.
CO2 drying after release of micromachined devices
Isotropic Si etching; can be used for backside Si removal on small pieces
Automatic development.
Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.
Automatic Resist spinning and bake
Pieces need a carrier wafer; Isotropic Etching
