N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
Bakes wafers after resist coating.
Bakes wafers with resist after the development, called post-bake.
500Å to 300µm
Convection in N2. Cure. Programmable.
CO2 drying after release of micromachined devices
Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
1:1 Contact Aligner. Backside align.
1:1 Contact Aligner. Backside align, including IR.
Manual solvent cleaning of substrates or masks. Teflon coated metal tweezers cleaning.
Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Ã
3 Probe Heads for different cleanliness groups.
Pieces need a carrier wafer; Isotropic Etching
Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.
Automatic Resist spinning and bake
Automatic development.
Manual wet etching of non-standard materials. Hot plate available. GaAs allowed in personal labware only.
