Equipment name & NEMO ID | Technique | Cleaning Required | Cleanliness | Primary Materials Etched | Other Materials Etched | Material Thickness Range | Materials Lab Supplied | Resist | Developer | Process Temperature Range | Gases | Sample Size Limits | Substrate Size | Substrate Type | Maximum Load |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
RTA AllWin 610 aw610_l |
Pre-Diffusion Clean | Clean |
21 °C - 1150 °C
|
, , |
1 wafer | ||||||||||
Samco PC300 Plasma Etch System samco |
Flexible |
20 ºC
|
, , , , , , , , , , , , , |
Four 4" wafers or two 6" wafers and one 8" wafer | |||||||||||
Savannah ALD savannah |
Flexible |
1.00 Å -
50.00 nm
|
24 °C - 250 °C
|
, , , , , , , , , , , , |
|||||||||||
SEM -Zeiss Merlin sem-merlin |
All |
0.00 mm -
35.00 mm
|
6 in wafer |
, , , , , , , , , , |
|||||||||||
Sensofar S-neox s-neox |
All |
, , , , , , , , |
1 | ||||||||||||
Sinton Lifetime Tester sinton-lifetime-tester |
Flexible | ||||||||||||||
SPTS uetch vapor etch uetch |
All |
, , , , , , , , , |
1 | ||||||||||||
SVG Develop Track 1 svgdev |
All |
, , , , , , , , |
25 4 inch wafers | ||||||||||||
SVG Develop Track 2 svgdev2 |
All |
, , , , , , , , |
25 4 inch wafers | ||||||||||||
SVG Resist Coat Track 1 svgcoat |
All |
, , , , , , , , |
25 4 inch wafers | ||||||||||||
SVG Resist Coat Track 2 svgcoat2 |
All |
, , , , , , , , |
25 4 inch wafers | ||||||||||||
Technics Asher technics |
Flexible |
, , |
Four 4" wafers to pieces, one 6" or 8" wafer | ||||||||||||
Tencor P2 Profilometer p2 |
Clean, Semiclean |
, , , , , , , , |
1 | ||||||||||||
Tystar Bank 1 Tube 1 Anneal B1T1 Flexible Oxide |
Flexible |
25.00 Å -
2.00 μm
|
400 °C - 1100 °C
|
, , |
100 | ||||||||||
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide |
Flexible |
25.00 Å -
2.00 μm
|
400 °C - 1100 °C
|
, , |
100 | ||||||||||
Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly |
Flexible |
25.00 Å -
2.00 μm
|
420 °C - 630 °C
|
, , , , , |
100 | ||||||||||
Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO |
Flexible |
25.00 Å -
2.00 μm
|
300 °C - 500 °C
|
, , , , , |
100 | ||||||||||
Tystar Bank 2 Tube 5 B2T5 Clean Anneal |
Pre-Diffusion Clean | Clean |
25.00 Å -
2.00 μm
|
400 °C - 1100 °C
|
, , |
100 | |||||||||
Tystar Bank 2 Tube 6 B2T6 Clean Oxide |
Pre-Diffusion Clean | Clean |
25.00 Å -
2.00 μm
|
400 °C - 1100 °C
|
, , |
100 | |||||||||
Tystar Bank 2 Tube 7 Nitride B2T7 Clean Nitride |
Pre-Diffusion Clean | Clean |
25.00 Å -
2.00 μm
|
420 °C - 800 °C
|
, , |
50 |