4 inch wafer

Short Name:

The following is a list of equipment where 4 inch round substrates are allowed.

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
EVG 101 Spray Coater evgspraycoat	Spray Coater EVG 101 Training	All	SNF Cleanroom Paul G Allen L107	Spray coating of resists
Finetech Lambda flipchipbonder	Flip Chip Bonder Training	Flexible	SNF Exfab Paul G Allen 104 Stinson
First Nano carbon nanotube CVD furnace cvd-nanotube	cvd-nanotube training	Flexible	SNF Exfab Paul G Allen L119 Año Nuevo	Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Gasonics Aura Asher gasonics	Resist Removal Dry Gasonics Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.
Headway Manual Resist Spinner headway2	Resist Coat (manual) Headway Manual Training	All	SNF Cleanroom Paul G Allen L107	Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Woollam woollam	Woollam Training	All	SNF Cleanroom Paul G Allen L107
Karl Suss MA-6 Contact Aligner karlsuss2	Contact Aligner Karl Suss MA-6 Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align.
Karl Suss MA-6 Contact Aligner karlsuss	Contact Aligner Karl Suss MA-6 Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align, including IR.
Lam Research TCP 9400 Poly Etcher lampoly	Lam Research TCP 9400 Poly Etcher Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.
Laurell Manual Resist Spinner laurell-R	Laurell Manual Resist Spinner Training	All	SNF Cleanroom Paul G Allen L107	SU-8, LOL, Ebeam resists allowed. No Acetone allowed.
Wet Bench Solvent Lithography lithosolv	Lithography Solvent Bench Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual solvent cleaning of substrates or masks. Teflon coated metal tweezers cleaning.
Matrix Plasma Resist Strip matrix	Matrix Plasma Resist Strip Training	Flexible	SNF Cleanroom Paul G Allen L107	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.
micromanipulator6000 IV-CV probe station micromanipulator6000	micromanipulator6000 IV-CV probe station Training	All	SNF Exfab Paul G Allen 151 Ocean
MRC Reactive Ion Etcher mrc	MRC Reactive Ion Etcher Training	Flexible	SNF Cleanroom Paul G Allen L107	Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode
Nanospec 210XP nanospec2	Nanospec Training	All	SNF Exfab Paul G Allen 104 Stinson	Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Ã
Optomec Printer optomec-printer	Optomec Printer Training	Flexible	SNF Exfab Paul G Allen 155A Venice
Oxford Dielectric Etcher oxford-rie	Oxford Dielectric Etcher Training	Flexible	SNF Cleanroom Paul G Allen L107	4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers
Oxford III-V etcher Ox-35	Oxford III-V etcher Training	Flexible	SNF Cleanroom Paul G Allen L107	Metal etching or Metal hard masks are not allowed. 4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers; Restrictions: III-V materials only.
Plasma Therm Versaline LL ICP Deep Silicon Etcher PT-DSE	Plasma Therm Versaline LL ICP Deep Silicon Etcher Training	Flexible	SNF Cleanroom Paul G Allen L107	Single wafer; Bosch process for Si etching; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; need a support wafer for through wafer etching, can be used for Isotropic Si Etching
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Plasma Therm Versaline LL ICP Dielectric Etcher Training	Flexible	SNF Cleanroom Paul G Allen L107	Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)

Pages

Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Materials User Supplied	Exposure Wavelength	Mask Size	Max Exposure Area	Resist	Process Temperature Range	Chemicals	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
Gasonics Aura Asher gasonics	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal	Clean, Semiclean	Resist	PI										O₂			4"	(Si)	25
Headway 3 Manual Resist Spinner headway3	Photolithography > Resist coat > Resist Coat (manual)	All									Resists Shipley 3612 resist SPR220-3 resist SPR220-7						Pieces 2" 3" 4"		1 piece or wafer
Headway Manual Resist Spinner headway2	Photolithography > Resist coat > Resist Coat (manual)	All									AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one piece or wafer
Heidelberg MLA 150 heidelberg	Photolithography > Exposure > Direct Write	All						405 nm									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Heidelberg MLA 150 - 2 heidelberg2	Photolithography > Exposure > Direct Write	All						375 nm									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
HMDS Vapor Prime Oven, YES yes	Photolithography > Wafer preparation before resist > Singe Photolithography > Wafer preparation before resist > Wafer Prime (HMDS)	All										150 ºC	[(CH₃)₃Si]₂NH				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Intlvac Evaporator Intlvac_evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Clean, Semiclean			0.00 - 0.50 μm	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly											Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	12 4 inch wafers, 2 6 inch wafers
Karl Suss MA-6 Contact Aligner karlsuss	Photolithography > Exposure > Contact Aligner	All						365 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Karl Suss MA-6 Contact Aligner karlsuss2	Photolithography > Exposure > Contact Aligner	All						365 nm or 405 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Keyence Digital Microscope VHX-6000 keyence	Characterization > Surface Analysis > Microscopy	All															Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Lam Research TCP 9400 Poly Etcher lampoly	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Clean, Semiclean	Si	Ge SiGe										80% He/ 20%O₂ C₂F₆ CF₄ Cl₂ HBr He N₂ O₂			4"	(Si) , (SiGe)	25
Laurell Manual Resist Spinner laurell-R	Photolithography > Resist coat > Resist Coat (manual)	All									Resists SU-8 LOL		(C₅O₂H₈)_n				Pieces 2" 3" 4" 6"
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement	All													8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	1 wafer(2" to 8")
Lesker Sputter lesker-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering	Flexible				Ag Al AlSi Au Co Cr Cu Fe Nb Ni Pd Si SiO₂ Ta Ti TiN W Alumina ITO	CoFeB Ge Hf In₂O₃ LaB₆ Ru Sc Sn TiN WO₃ ZnO₃ ZrY GST Hafnia Moly Ti Tungsten										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1 4 inch wafer, 1 6 inch wafer
Lesker2 Sputter lesker2-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering	Semiclean			1.00 μm	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly						°C - 800 °C		Ar N₂ O₂			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one 4 inch wafer, one 6 inch wafer
Matrix Plasma Resist Strip matrix	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal	Flexible	Resist	PI										O₂			4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	25
micromanipulator6000 IV-CV probe station micromanipulator6000	Characterization	All															Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb) , (Various)	1x4" wafer
MRC Reactive Ion Etcher mrc	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)	Flexible	Metals Various Dielectrics	Metal oxides PI										Ar CHClF₂ CHF₃ O₂ SF₆			Pieces 2" 3" 4" 6"		1
MVD mvd	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD	Flexible			1.00 Å - 50.00 nm	C₉H₂₃NO₃Si Various Dielectrics Alumina DETA Hafnia ODS SAMS						24 °C - 150 °C		Ar			Pieces 2" 3" 4" 6" 8"
Nanospec 210XP nanospec2	Characterization > Reflectometry	All															Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)