4 inch wafer

Short Name:

The following is a list of equipment where 4 inch round substrates are allowed.

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
SVG Resist Coat Track 2 svgcoat2	SVG Resist Coat Tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.
Fiji 2 ALD fiji2	ALD Fiji 1 and 2 Training	Flexible	SNF Cleanroom Paul G Allen L107
Wet Bench Miscellaneous wbmiscres	Wet Bench Miscellaneous Photoresist Training	Flexible	SNF Cleanroom Paul G Allen L107	Manual development of resist in beakers and Headway (manual resist spinner). SNF approved developers (acid or base). No solvents!
Matrix Plasma Resist Strip matrix	Matrix Plasma Resist Strip Training	Flexible	SNF Cleanroom Paul G Allen L107	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.
Karl Suss MA-6 Contact Aligner karlsuss2	Contact Aligner Karl Suss MA-6 Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align.
Wet Bench Clean 2 wbclean-2	Wet Bench Clean1and2 Training	Clean	SNF Cleanroom Paul G Allen L107	No resist allowed. Resist should have been removed at the wbclean_res-piranha
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide	Tystar Atmospheric Tube Training	Flexible	SNF Cleanroom Paul G Allen L107
Fiji 3 ALD fiji3	ALD Fiji 3 Training	Flexible	SNF Cleanroom Paul G Allen L107	Restricted to non-conductive films only
Wet Bench Resist Strip wbresstrip-1	Wet Bench Resist Strip	Clean (Ge), Semiclean, Flexible	SNF Cleanroom Paul G Allen L107	Wet Resist Removal: SRS-100 or PRS1000
Xactix Xenon Difluoride Etcher xactix	Xactix Xenon Difluoride Etcher Training	All	SNF Cleanroom Paul G Allen L107	Isotropic Si etching; can be used for backside Si removal on small pieces
Karl Suss MA-6 Contact Aligner karlsuss	Contact Aligner Karl Suss MA-6 Training	All	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align, including IR.
SVG Develop Track 2 svgdev2	SVG Resist Develop tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic development.
Tystar Bank 2 Tube 5 B2T5 Clean Anneal	Tystar Atmospheric Tube Training	Clean	SNF Cleanroom Paul G Allen L107
MVD mvd	MVD Training	Flexible	SNF Cleanroom Paul G Allen L107	Reactor located inside glovebox
Headway 3 Manual Resist Spinner headway3	Resist Coat (manual) Headway 3 Training	All	SNF Exfab Paul G Allen 104 Stinson
Ex Fab Develop Wet Bench wbexfab_dev	WbExfab_Dev Training	Flexible	SNF Exfab Paul G Allen 104 Stinson	Manual development of resist in beakers. SNF approved developers only. No solvents!
Keyence Digital Microscope VHX-6000 keyence	Microscope Keyence Training	All	SNF Exfab Paul G Allen 104 Stinson
Finetech Lambda flipchipbonder	Flip Chip Bonder Training	Flexible	SNF Exfab Paul G Allen 104 Stinson
Ex Fab Solvent Wet Bench wbexfab_solv	WbExfab_Solv Training	Flexible	SNF Exfab Paul G Allen 104 Stinson
Nanospec 210XP nanospec2	Nanospec Training	All	SNF Exfab Paul G Allen 104 Stinson	Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Ã

Pages

Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Developer	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Clean			25.00 Å - 2.00 μm	SiO₂		300 °C - 500 °C		N₂ O₂ PH₃ SiH₄	4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	Si3N4 SiON		420 °C - 800 °C		NH₃ DCS	4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	SiO₂		420 °C - 630 °C		N₂ O₂ Si(OC₂H₅)₄	4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	Si Poly Silicon		420 °C - 630 °C		B₂H₆ GeH₄ N₂ PH₃ SiH₄	4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 3 Tube 9 B3T9 Clean Oxide	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	SiO₂		400 °C - 1100 °C		4% H₂ in N₂ N₂ O₂	4" 6"	(Si) , (SiGe) , (SiO2)	100
Wet Bench Clean 1 wbclean-1	Cleaning > Pre-Diffusion Clean Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean Wet Chemical Processing		Clean							50:1 HF SC1 SC2		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25
Wet Bench Clean 2 wbclean-2	Cleaning > Pre-Diffusion Clean Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean Wet Chemical Processing		Clean							50:1 HF 6:1 BOE SC1 SC2		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25
Wet Bench Clean_res- hotphos wbclean_res-hotphos	Etching > Wet Etching > Silicon Nitride Wet Etching Wet Chemical Processing		Clean	Si3N4								3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Clean_res-hf wbclean_res-hf	Etching > Wet Etching > Silicon Oxide Wet Etching Wet Chemical Processing		Clean	SiO₂						20:1 BOE 50:1 HF 6:1 BOE		3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Clean_res-piranha wbclean_res-piranha	Cleaning > Piranha Cleaning Wet Chemical Processing Cleaning > Resist Removal > Wet Resist Removal		Clean							9:1 Piranha		3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench CMOS Metal wbclean3	Etching > Wet Etching > Aluminum and Titanium and Tungsten Wet Etching Wet Chemical Processing		Semiclean	Al Ti W						20:1 BOE 50:1 HF 6:1 BOE Al-Etch Ti-Etch W-etch		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25 wafers
Wet Bench Decontamination wbdecon	Cleaning > Decontamination Wet Chemical Processing		Clean							SC2		3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Flexcorr 1 wbflexcorr-1	Etching > Wet Etching > Acid or Base Wet Etching Etching > Wet Etching > Aluminum and Titanium and Tungsten Wet Etching Cleaning > Decontamination Cleaning > Metal Clean Cleaning > Piranha Cleaning Etching > Wet Etching > Silicon Oxide Wet Etching Etching > Wet Etching > Silicon Wet Etching Wet Chemical Processing Cleaning > Resist Removal > Wet Resist Removal		Flexible	Metals Al Au Cr Si SiO₂ Resist	GaAs Si3N4 Ti W					Acids Bases Gold Etchant 20:1 BOE 50:1 HF 6:1 BOE 9:1 Piranha Al-Etch Chrome Etch KOH SC1 SC2		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)
Wet Bench Flexcorr 2 wbflexcorr-2	Etching > Wet Etching > Acid or Base Wet Etching Cleaning > Piranha Cleaning Wet Chemical Processing		Flexible							Acids Bases		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)
Wet Bench Flexcorr 3 wbflexcorr-3	Etching > Wet Etching > Acid or Base Wet Etching Cleaning > Piranha Cleaning Wet Chemical Processing		Flexible							Acids Bases		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various)
Wet Bench Flexcorr 4 wbflexcorr-4	Etching > Wet Etching > Acid or Base Wet Etching Cleaning > Piranha Cleaning Wet Chemical Processing		Flexible							Acids Bases		Pieces 2" 3" 4" 6"
Wet Bench Flexible Solvents wbflexsolv	Patterning > Metal Lift-off Cleaning > Solvent Cleaning Cleaning > Resist Removal > Wet Resist Removal		Flexible							Solvents		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)
Wet Bench Flexible Solvents 1 wbflexsolv-1	Cleaning > Solvent Cleaning Wet Chemical Processing Cleaning > Resist Removal > Wet Resist Removal		Flexible							Solvents		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)
Wet Bench Flexible Solvents 2 wbflexsolv-2	Cleaning > Solvent Cleaning Wet Chemical Processing Cleaning > Resist Removal > Wet Resist Removal		Flexible							Solvents		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)
Wet Bench Miscellaneous wbmiscres	Photolithography > Resist Develop > Resist Develop (manual) Wet Chemical Processing		Flexible					AZ 1:1		Developers		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)