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4 inch wafer

Short Name: 
4"

The following is a list of equipment where 4 inch round substrates are allowed.

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Equipment name & NEMO ID Training Required & Charges Cleanliness Locationsort descending Notes
Wet Bench Clean_res- hotphos
wbclean_res-hotphos
Wet Bench Clean Piranha/HF/Phosphoric Training Clean SNF Cleanroom Paul G Allen L107

Resist should have been removed

Wet Bench Clean 1
wbclean-1
Wet Bench Clean1and2 Training Clean SNF Cleanroom Paul G Allen L107

No resist allowed. Resist should have been removed at the wbclean_res-piranha.

Oven (White)
white-oven
White Oven Training Flexible SNF Cleanroom Paul G Allen L107

For LOL2000 bake or bakes which are not allowed in the other ovens and need higher temperatures, up to 200C, programmable.

Flexus 2320 Stress Tester
stresstest
Stress Tester Flexus 2320 Training All SNF Cleanroom Paul G Allen L107
Lesker2 Sputter
lesker2-sputter
Sputter Lesker 1&2 Training Semiclean SNF Cleanroom Paul G Allen L107

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO
Tystar LPCVD Tube Training Clean SNF Cleanroom Paul G Allen L107
Wet Bench Flexcorr 1
wbflexcorr-1
Wet Bench Flexcorr 1and2 and 3and4 Training Flexible SNF Cleanroom Paul G Allen L107

Manual wet etching of non-standard materials. Hot plate available. GaAs allowed in personal labware only.

MRC Reactive Ion Etcher
mrc
MRC Reactive Ion Etcher Training Flexible SNF Cleanroom Paul G Allen L107

Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode

Oven BlueM 200°C to 430°C
bluem
Blue M Oven Training Flexible SNF Cleanroom Paul G Allen L107

Convection in N2. Cure. Programmable.

AJA2 Evaporator
aja2-evap
Evaporator AJA2 Training Flexible SNF Cleanroom Paul G Allen L107

For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance

CHA Solutions II Evaporator
cha-evap
Evaporator CHA Training Flexible SNF Cleanroom Paul G Allen L107

For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance

micromanipulator6000 IV-CV probe station
micromanipulator6000
micromanipulator6000 IV-CV probe station Training All SNF Exfab Paul G Allen 151 Ocean
Sinton Lifetime Tester
sinton-lifetime-tester
Sinton Lifetime Tester Training Flexible SNF Exfab Paul G Allen 151 Ocean
LEI1500 Contactless Sheet Resistance Mapping
eddycurrent
LEI1500 Contactless Sheet Resistance Mapping Training All SNF Exfab Paul G Allen 151 Ocean
DISCO Wafer Saw
DISCO wafersaw
Wafersaw DISCO training Flexible SNF Exfab Paul G Allen 159 Capitola
Optomec Printer
optomec-printer
Optomec Printer Training Flexible SNF Exfab Paul G Allen 155A Venice
AJA Evaporator
aja-evap
Evaporator AJA training Flexible SNF Exfab Paul G Allen 155A Venice

For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance

Lesker Sputter
lesker-sputter
Sputter Lesker 1&2 Training Flexible SNF Exfab Paul G Allen 155A Venice

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

First Nano carbon nanotube CVD furnace
cvd-nanotube
cvd-nanotube training Flexible SNF Exfab Paul G Allen L119 Año Nuevo

Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density

Aixtron Black Magic graphene CVD furnace
aixtron-graphene
CVD graphene furnace Aixtron Black Magic training Flexible SNF Exfab Paul G Allen L119 Año Nuevo

Pages

Equipment name & NEMO ID Technique Cleaning Required Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Developer Process Temperature Range Chemicals Gases Substrate Size Substrate Type Maximum Load
Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO
Clean
25.00 Å - 2.00 μm
300 °C - 500 °C
,
,
100
Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 800 °C
,
,
50
Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 630 °C
,
,
50
Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 630 °C
,
,
50
Tystar Bank 3 Tube 9
B3T9 Clean Oxide
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
,
,
100
Wet Bench Clean 1
wbclean-1
Clean
,
,
25
Wet Bench Clean 2
wbclean-2
Clean
,
,
25
Wet Bench Clean_res- hotphos
wbclean_res-hotphos
Clean
,
,
Wet Bench Clean_res-hf
wbclean_res-hf
Clean
,
,
Wet Bench Clean_res-piranha
wbclean_res-piranha
Clean
,
,
Wet Bench CMOS Metal
wbclean3
Semiclean
,
,
25 wafers
Wet Bench Decontamination
wbdecon
Clean
,
,
Wet Bench Flexcorr 1
wbflexcorr-1
Flexible ,
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,
Wet Bench Flexcorr 2
wbflexcorr-2
Flexible ,
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,
Wet Bench Flexcorr 3
wbflexcorr-3
Flexible ,
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,
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,
Wet Bench Flexcorr 4
wbflexcorr-4
Flexible
Wet Bench Flexible Solvents
wbflexsolv
Flexible ,
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Wet Bench Flexible Solvents 1
wbflexsolv-1
Flexible ,
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Wet Bench Flexible Solvents 2
wbflexsolv-2
Flexible ,
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Wet Bench Miscellaneous
wbmiscres
Flexible ,
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