Skip to content Skip to navigation

4 inch wafer

Short Name: 
4"

The following is a list of equipment where 4 inch round substrates are allowed.

Subscribe to
Equipment name & NEMO ID Training Required & Charges Cleanliness Locationsort ascending Notes
Laurell Manual Resist Spinner
laurell-R 		Laurell Manual Resist Spinner Training All SNF Cleanroom Paul G Allen L107

SU-8, LOL, Ebeam resists allowed. No Acetone allowed. 
Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly 		Tystar LPCVD Tube Training Clean SNF Cleanroom Paul G Allen L107
Wet Bench Clean_res-piranha
wbclean_res-piranha 		Wet Bench Clean Piranha/HF/Phosphoric Training Clean SNF Cleanroom Paul G Allen L107

Resist will be removed
EVG 101 Spray Coater
evgspraycoat 		Spray Coater EVG 101 Training All SNF Cleanroom Paul G Allen L107

Spray coating of resists
Sensofar S-neox
s-neox 		Sensofar S-neox Training All SNF Cleanroom Paul G Allen L107

non contact 3D optical profiling
Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride 		Tystar LPCVD Tube Training Clean SNF Cleanroom Paul G Allen L107
AMAT Centurion Epitaxial System
epi2 		Epitaxial AMAT Centurion Training Clean SNF Cleanroom Paul G Allen L107

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Wet Bench Flexcorr 3
wbflexcorr-3 		Wet Bench Flexcorr 1and2 and 3and4 Training Flexible SNF Cleanroom Paul G Allen L107

Manual wet etching of non-standard materials using acids or bases. Hot Plate available. GaAs not allowed.
SVG Resist Coat Track 1
svgcoat 		SVG Resist Coat Tracks 1 and 2 Training All SNF Cleanroom Paul G Allen L107

Automatic Resist spinning and bake
Tencor P2 Profilometer
p2 		Tencor P2 Profilometer Training Clean, Semiclean SNF Cleanroom Paul G Allen L107

Step height measurement range 500 Å to 80 µm
Heidelberg MLA 150 - 2
heidelberg2 		Heidelberg Training All SNF Cleanroom Paul G Allen L107

Direct Write
Tystar Bank 2 Tube 7 Nitride
B2T7 Clean Nitride 		Tystar LPCVD Tube Training Clean SNF Cleanroom Paul G Allen L107
PlasmaTherm Shuttlelock PECVD System
ccp-dep 		PlasmaTherm Shuttlelock PECVD System Training All SNF Cleanroom Paul G Allen L107

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Wet Bench Flexible Solvents
wbflexsolv 		Wet Bench Flexible Solvents 1 and 2 Training Flexible SNF Cleanroom Paul G Allen L107

Manual solvent cleaning of substrates or resist removal.
SPTS uetch vapor etch
uetch 		SPTS uetch vapor etch Training All SNF Cleanroom Paul G Allen L107

Pieces need a carrier wafer; Isotropic Etching
Technics Asher
technics 		Technics Asher Training Flexible SNF Cleanroom Paul G Allen L107
Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO 		Tystar LPCVD Tube Training Flexible SNF Cleanroom Paul G Allen L107
PlasmaTherm Versaline HDP CVD System
hdpcvd 		PlasmaTherm Versaline HDP CVD System Training All SNF Cleanroom Paul G Allen L107

To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) .  Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Critical Point Dryer Tousimis Automegasamdri-936
cpd 		Critical Point Dryer Training Flexible SNF Cleanroom Paul G Allen L107

CO2 drying after release of micromachined devices
HMDS Vapor Prime Oven, YES
yes 		YES Prime Oven Training All SNF Cleanroom Paul G Allen L107

Two programs: Singe and HMDS prime or Singe only. No Resist allowed!

Pages

Equipment name & NEMO ID Technique Cleaning Required Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Resist Developer Process Temperature Range Gases Sample Size Limits Substrate Size Substrate Type Maximum Load
RTA AllWin 610
aw610_r
Flexible
21 °C - 1150 °C
(Si)
,
(SiGe)
,
(SiO2)
Samco PC300 Plasma Etch System
samco
Flexible
20 ºC
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
,
(Various)
,
(Various)
,
(LiNb)
,
(Various)
 Four 4" wafers or two 6" wafers and one 8" wafer
Savannah ALD
savannah
Flexible
1.00 Å - 50.00 nm
24 °C - 250 °C
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(Various)
,
(Various)
,
(LiNb)
,
(Various)
SEM -Zeiss Merlin
sem-merlin
All
0.00 mm - 35.00 mm
6 in wafer
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
,
(LiNb)
Sensofar S-neox
s-neox
All
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 1
Sinton Lifetime Tester
sinton-lifetime-tester
Flexible
SPTS uetch vapor etch
uetch
All
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
 1
SVG Develop Track 1
svgdev
All
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 25 4 inch wafers
SVG Develop Track 2
svgdev2
All
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 25 4 inch wafers
SVG Resist Coat Track 1
svgcoat
All
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 25 4 inch wafers
SVG Resist Coat Track 2
svgcoat2
All
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 25 4 inch wafers
Technics Asher
technics
Flexible
(Si)
,
(SiO2)
,
(SiO2)
 Four 4" wafers to pieces, one 6" or 8" wafer
Tencor P2 Profilometer
p2
Clean, Semiclean
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 1
Tystar Bank 1 Tube 1 Anneal
B1T1 Flexible Oxide
Flexible
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 1 Tube 2
B1T2 Flexible Oxide
Flexible
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly
Flexible
25.00 Å - 2.00 μm
420 °C - 630 °C
(Si)
,
(SiGe)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(III-V)
 100
Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO
Flexible
25.00 Å - 2.00 μm
300 °C - 500 °C
(Si)
,
(SiGe)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(III-V)
 100
Tystar Bank 2 Tube 5
B2T5 Clean Anneal
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 2 Tube 6
B2T6 Clean Oxide
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 2 Tube 7 Nitride
B2T7 Clean Nitride
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 800 °C
(Si)
,
(SiGe)
,
(SiO2)
 50

Pages