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4 inch wafer

Short Name: 
4"

The following is a list of equipment where 4 inch round substrates are allowed.

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Equipment name & NEMO ID Training Required & Charges Cleanliness Locationsort descending Notes
Wet Bench Flexcorr 4
wbflexcorr-4
Wet Bench Flexcorr 1and2 and 3and4 Training Flexible SNF Cleanroom Paul G Allen L107

Manual wet etching of non-standard materials using acids or bases. Hot plate, HF bath, and controlled temperature bath available. GaAs not allowed.

Oxford Dielectric Etcher
oxford-rie
Oxford Dielectric Etcher Training Flexible SNF Cleanroom Paul G Allen L107

4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers

EVG Contact Aligner
evalign
Contact Aligner EVG Training All SNF Cleanroom Paul G Allen L107

1:1 Contact Aligner.
Anodic Bond, backside align, including IR.

Tystar Bank 3 Tube 9
B3T9 Clean Oxide
Tystar Atmospheric Tube Training Clean SNF Cleanroom Paul G Allen L107
Wet Bench Flexible Solvents 1
wbflexsolv-1
Wet Bench Flexible Solvents 1 and 2 Training Flexible SNF Cleanroom Paul G Allen L107

Manual solvent cleaning, two ultrasonic baths.

Lam Research TCP 9400 Poly Etcher
lampoly
Lam Research TCP 9400 Poly Etcher Training Clean, Semiclean SNF Cleanroom Paul G Allen L107

Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.

RTA AllWin 610
aw610_r
AllWin 610 RTA Training Flexible SNF Cleanroom Paul G Allen L107
Tystar Bank 1 Tube 1 Anneal
B1T1 Flexible Oxide
Tystar Atmospheric Tube Training Flexible SNF Cleanroom Paul G Allen L107
Headway Manual Resist Spinner
headway2
Resist Coat (manual) Headway Manual Training All SNF Cleanroom Paul G Allen L107

Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists

Wet Bench Flexible Solvents 2
wbflexsolv-2
Wet Bench Flexible Solvents 1 and 2 Training Flexible SNF Cleanroom Paul G Allen L107

Manual solvent cleaning, hot plate

Plasma Therm Versaline LL ICP Dielectric Etcher
PT-Ox
Plasma Therm Versaline LL ICP Dielectric Etcher Training Flexible SNF Cleanroom Paul G Allen L107

Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)

RTA AllWin 610
aw610_l
AllWin 610 RTA Training Clean SNF Cleanroom Paul G Allen L107
Oxford Plasma Pro ICP-RIE
Ox-gen
Ox-gen etcher Training Clean SNF Cleanroom Paul G Allen L107
Fiji 1 ALD
fiji1
ALD Fiji 1 and 2 Training Semiclean SNF Cleanroom Paul G Allen L107
Wet Bench Decontamination
wbdecon
Wet Bench Decontamination Training Clean SNF Cleanroom Paul G Allen L107

KOH or wafersaw or post-cmp decontamination

SVG Develop Track 1
svgdev
SVG Resist Develop tracks 1 and 2 Training All SNF Cleanroom Paul G Allen L107

Automatic development.

Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly
Tystar LPCVD Tube Training Flexible SNF Cleanroom Paul G Allen L107
Oxford III-V etcher
Ox-35
Oxford III-V etcher Training Flexible SNF Cleanroom Paul G Allen L107

Metal etching or  Metal hard masks are not allowed. 4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers; Restrictions: III-V materials only.

Wet Bench Solvent Lithography
lithosolv
Lithography Solvent Bench Training Flexible SNF Cleanroom Paul G Allen L107

Manual solvent cleaning of substrates or masks. Teflon coated metal tweezers cleaning.

Laurell Manual Resist Spinner
laurell-R
Laurell Manual Resist Spinner Training All SNF Cleanroom Paul G Allen L107

SU-8, LOL, Ebeam resists allowed. No Acetone allowed. 

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Equipment name & NEMO ID Technique Cleaning Required Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Resist Developer Process Temperature Range Gases Sample Size Limits Substrate Size Substrate Type Maximum Load
RTA AllWin 610
aw610_r
Flexible
21 °C - 1150 °C
,
,
Samco PC300 Plasma Etch System
samco
Flexible
20 ºC
,
,
,
,
,
,
,
,
,
,
,
,
,
Four 4" wafers or two 6" wafers and one 8" wafer
Savannah ALD
savannah
Flexible
1.00 Å - 50.00 nm
24 °C - 250 °C
,
,
,
,
,
,
,
,
,
,
,
,
SEM -Zeiss Merlin
sem-merlin
All
0.00 mm - 35.00 mm
6 in wafer ,
,
,
,
,
,
,
,
,
,
Sensofar S-neox
s-neox
All ,
,
,
,
,
,
,
,
1
Sinton Lifetime Tester
sinton-lifetime-tester
Flexible
SPTS uetch vapor etch
uetch
All ,
,
,
,
,
,
,
,
,
1
SVG Develop Track 1
svgdev
All
,
,
,
,
,
,
,
,
25 4 inch wafers
SVG Develop Track 2
svgdev2
All
,
,
,
,
,
,
,
,
25 4 inch wafers
SVG Resist Coat Track 1
svgcoat
All
,
,
,
,
,
,
,
,
25 4 inch wafers
SVG Resist Coat Track 2
svgcoat2
All
,
,
,
,
,
,
,
,
25 4 inch wafers
Technics Asher
technics
Flexible
,
,
Four 4" wafers to pieces, one 6" or 8" wafer
Tencor P2 Profilometer
p2
Clean, Semiclean ,
,
,
,
,
,
,
,
1
Tystar Bank 1 Tube 1 Anneal
B1T1 Flexible Oxide
Flexible
25.00 Å - 2.00 μm
400 °C - 1100 °C
,
,
100
Tystar Bank 1 Tube 2
B1T2 Flexible Oxide
Flexible
25.00 Å - 2.00 μm
400 °C - 1100 °C
,
,
100
Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly
Flexible
25.00 Å - 2.00 μm
420 °C - 630 °C
,
,
,
,
,
100
Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO
Flexible
25.00 Å - 2.00 μm
300 °C - 500 °C
,
,
,
,
,
100
Tystar Bank 2 Tube 5
B2T5 Clean Anneal
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
,
,
100
Tystar Bank 2 Tube 6
B2T6 Clean Oxide
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
,
,
100
Tystar Bank 2 Tube 7 Nitride
B2T7 Clean Nitride
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 800 °C
,
,
50

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