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4 inch wafer

Short Name: 
4"

The following is a list of equipment where 4 inch round substrates are allowed.

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Equipment name & NEMO ID Training Required & Chargessort ascending Cleanliness Location Notes
Prometrix Resistivity Mapping System
prometrix 		Prometrix Training All SNF Cleanroom Paul G Allen L107

3 Probe Heads for different cleanliness groups.
PlasmaTherm Shuttlelock PECVD System
ccp-dep 		PlasmaTherm Shuttlelock PECVD System Training All SNF Cleanroom Paul G Allen L107

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Plasmaetch PE-50
plasma-etch 		Plasmaetch PE-50 Training Flexible SNF Exfab Paul G Allen 155 Mavericks

Low power, high pressure plasma; low bias, minimal damage. Often used for surface treatment At SNF - nSiL lab
Plasma Therm Versaline LL ICP Metal Etcher
PT-MTL 		Plasma Therm Versaline LL ICP Metal Etcher Training Flexible SNF Cleanroom Paul G Allen L107

Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)
Plasma Therm Versaline LL ICP Dielectric Etcher
PT-Ox 		Plasma Therm Versaline LL ICP Dielectric Etcher Training Flexible SNF Cleanroom Paul G Allen L107

Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)
Plasma Therm Versaline LL ICP Deep Silicon Etcher
PT-DSE 		Plasma Therm Versaline LL ICP Deep Silicon Etcher Training Flexible SNF Cleanroom Paul G Allen L107

Single wafer; Bosch process for Si etching; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; need a support wafer for through wafer etching, can be used for Isotropic Si Etching
Oxford III-V etcher
Ox-35 		Oxford III-V etcher Training Flexible SNF Cleanroom Paul G Allen L107

Metal etching or  Metal hard masks are not allowed. 4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers; Restrictions: III-V materials only.
Oxford Dielectric Etcher
oxford-rie 		Oxford Dielectric Etcher Training Flexible SNF Cleanroom Paul G Allen L107

4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers
Optomec Printer
optomec-printer 		Optomec Printer Training Flexible SNF Exfab Paul G Allen 155A Venice
Nanospec 210XP
nanospec2 		Nanospec Training All SNF Exfab Paul G Allen 104 Stinson

Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Å
MRC Reactive Ion Etcher
mrc 		MRC Reactive Ion Etcher Training Flexible SNF Cleanroom Paul G Allen L107

Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode
micromanipulator6000 IV-CV probe station
micromanipulator6000 		micromanipulator6000 IV-CV probe station Training All SNF Exfab Paul G Allen 151 Ocean
Matrix Plasma Resist Strip
matrix 		Matrix Plasma Resist Strip Training Flexible SNF Cleanroom Paul G Allen L107

Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.
Wet Bench Solvent Lithography
lithosolv 		Lithography Solvent Bench Training Flexible SNF Cleanroom Paul G Allen L107

Manual solvent cleaning of substrates or masks. Teflon coated metal tweezers cleaning.
Laurell Manual Resist Spinner
laurell-R 		Laurell Manual Resist Spinner Training All SNF Cleanroom Paul G Allen L107

SU-8, LOL, Ebeam resists allowed. No Acetone allowed. 
Lam Research TCP 9400 Poly Etcher
lampoly 		Lam Research TCP 9400 Poly Etcher Training Clean, Semiclean SNF Cleanroom Paul G Allen L107

Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.
Karl Suss MA-6 Contact Aligner
karlsuss2 		Contact Aligner Karl Suss MA-6 Training All SNF Cleanroom Paul G Allen L107

1:1 Contact Aligner.
Backside align.
Karl Suss MA-6 Contact Aligner
karlsuss 		Contact Aligner Karl Suss MA-6 Training All SNF Cleanroom Paul G Allen L107

1:1 Contact Aligner.
Backside align, including IR.
Woollam
woollam 		Woollam Training All SNF Cleanroom Paul G Allen L107
Headway Manual Resist Spinner
headway2 		Resist Coat (manual) Headway Manual Training All SNF Cleanroom Paul G Allen L107

Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists

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Equipment name & NEMO ID Technique Cleaning Required Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Resist Developer Process Temperature Range Gases Sample Size Limits Substrate Size Substrate Type Maximum Load
RTA AllWin 610
aw610_r
Flexible
21 °C - 1150 °C
(Si)
,
(SiGe)
,
(SiO2)
Samco PC300 Plasma Etch System
samco
Flexible
20 ºC
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
,
(Various)
,
(Various)
,
(LiNb)
,
(Various)
 Four 4" wafers or two 6" wafers and one 8" wafer
Savannah ALD
savannah
Flexible
1.00 Å - 50.00 nm
24 °C - 250 °C
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(Various)
,
(Various)
,
(LiNb)
,
(Various)
SEM -Zeiss Merlin
sem-merlin
All
0.00 mm - 35.00 mm
6 in wafer
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
,
(LiNb)
Sensofar S-neox
s-neox
All
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 1
Sinton Lifetime Tester
sinton-lifetime-tester
Flexible
SPTS uetch vapor etch
uetch
All
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(GaN)
,
(III-V)
,
(GaAs)
 1
SVG Develop Track 1
svgdev
All
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 25 4 inch wafers
SVG Develop Track 2
svgdev2
All
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 25 4 inch wafers
SVG Resist Coat Track 1
svgcoat
All
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 25 4 inch wafers
SVG Resist Coat Track 2
svgcoat2
All
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 25 4 inch wafers
Technics Asher
technics
Flexible
(Si)
,
(SiO2)
,
(SiO2)
 Four 4" wafers to pieces, one 6" or 8" wafer
Tencor P2 Profilometer
p2
Clean, Semiclean
(Si)
,
(SiGe)
,
(SiO2)
,
(Al2O3)
,
(SiO2)
,
(Ge)
,
(GaN)
,
(III-V)
,
(GaAs)
 1
Tystar Bank 1 Tube 1
B1T1 Flexible Oxide
Flexible
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 1 Tube 2
B1T2 Flexible Oxide Anneal
Flexible
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly
Flexible
25.00 Å - 2.00 μm
420 °C - 630 °C
(Si)
,
(SiGe)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(III-V)
 100
Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO
Flexible
25.00 Å - 2.00 μm
300 °C - 500 °C
(Si)
,
(SiGe)
,
(SiO2)
,
(Ge)
,
(SiC)
,
(III-V)
 100
Tystar Bank 2 Tube 5
B2T5 Clean Oxide Anneal
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 2 Tube 6
B2T6 Clean Oxide
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
(Si)
,
(SiGe)
,
(SiO2)
 100
Tystar Bank 2 Tube 7 Nitride
B2T7 Clean Nitride
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 800 °C
(Si)
,
(SiGe)
,
(SiO2)
 50

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