1:1 Contact Aligner. Backside align, including IR.
No resist allowed. Resist should have been removed at the wbclean_res-piranha.
Direct Write
Resist should have been removed
Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode
Manual wet etching of non-standard materials. Hot plate available. GaAs allowed in personal labware only.
Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)
Manual wet etching of non-standard materials. Hot pots available. GaAs allowed in personal labware only
Isotropic Si etching; can be used for backside Si removal on small pieces
non contact 3D optical profiling
reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance
