6 inch wafer

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Equipment Tables

Equipment name & NEMO ID	Technique	Cleanliness	Material Thickness Range	Materials Lab Supplied	Exposure Wavelength	Mask Size	Max Exposure Area	Resist	Developer	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
AJA Evaporator aja-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Flexible	0.00 - 300.00 nm	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti Titania									Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Other (ProMCom approval required) (Various)	4"x3 or 6"x1 wafers or pieces
AJA2 Evaporator aja2-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Flexible	0.00 - 300.00 nm	Ag Al Au Cr Cu Ni Pd Pt Ti									Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Germanium (Ge) Other (ProMCom approval required) (Various)	4"x3 or 6"x1 wafers or pieces
CHA Solutions II Evaporator cha-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Flexible	0.00 - 300.00 nm	Ag Al Au Cr Cu Ni Pd Pt Ti									Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Germanium (Ge) Other (ProMCom approval required) (Various)	4"x15 or 6"x3 wafers or pieces
Critical Point Dryer Tousimis Automegasamdri-936 cpd	Drying > CO2 Drying Wet Chemical Processing	Flexible									CO₂		Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)
DISCO Wafer Saw DISCO wafersaw	Machining > Wafer Saw	Flexible											Pieces 2" 3" 4" 6" 8"	Silicon (Si) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V)	1x4", 1x6" or 1x8" wafer, or pieces
EVG 101 Spray Coater evgspraycoat	Photolithography > Resist coat > Resist Spray Coat (manual)	"All"						Resists					Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂)	1
Ex Fab Develop Wet Bench wbexfab_dev	Photolithography > Resist Develop > Resist Develop (manual) Wet Chemical Processing	Flexible							AZ 1:1 MF-26A developer				Pieces 2" 3" 4" 6" 8" 12" Cones Disks Other
Ex Fab Solvent Wet Bench wbexfab_solv	Cleaning > Solvent Cleaning Patterning > Metal Lift-off Wet Chemical Processing	Flexible									Solvents		Pieces 2" 3" 4" 6" 8" Other
Fiji 1 ALD fiji1	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Semiclean	1.00 Å - 50.00 nm	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia						24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)
Fiji 2 ALD fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Flexible	1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia						24 °C - 350 °C		Ar H₂ N₂ O₂	Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)
Fiji 3 ALD fiji3	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Flexible	1.00 Å - 50.00 nm	SiO₂ Various Dielectrics Alumina Hafnia Titania						24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) III-V (III-V)
Filmetrics 4PP Filmetrics 4PP	Characterization > Sheet Resistance Measurement	"All"											Pieces 2" 3" 4" 6" 8"	Silicon (Si)	1
Flexus 2320 Stress Tester stresstest	Characterization > Film Stress Measurement	"All"											3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	1
Headway Manual Resist Spinner headway2	Photolithography > Resist coat > Resist Coat (manual)	"All"						AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n					Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	one piece or wafer
Heidelberg MLA 150 heidelberg	Photolithography > Exposure > Direct Write	"All"			405 nm								Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb)	1
Heidelberg MLA 150 - 2 heidelberg2	Photolithography > Exposure > Direct Write	"All"			375 nm								Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb)	1
HMDS Vapor Prime Oven, YES yes	Photolithography > Wafer preparation before resist > Wafer Prime (HMDS) Photolithography > Wafer preparation before resist > Singe	"All"								150 ºC	[(CH₃)₃Si]₂NH		Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)
Intlvac Evaporator Intlvac_evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Clean, Semiclean	0.00 - 0.50 μm	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly									Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)	12 4 inch wafers, 2 6 inch wafers
Karl Suss MA-6 Contact Aligner karlsuss2	Photolithography > Exposure > Contact Aligner	"All"			365 nm or 405 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch						Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various)
Karl Suss MA-6 Contact Aligner karlsuss	Photolithography > Exposure > Contact Aligner	"All"			365 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch						Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various)

6 inch wafer

Equipment Tables

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