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4 inch wafer

Short Name: 
4"

The following is a list of equipment where 4 inch round substrates are allowed.

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Equipment name & NEMO ID Training Required & Charges Cleanliness Locationsort ascending Notes
ASML PAS 5500/60 i-line Stepper
asml
Stepper ASML PAS 5500/60 i-line Training "All" SNF Paul G Allen L107 Cleanroom

5:1 reducing stepper

Oxford Plasma Pro ICP-RIE
Ox-gen
Ox-gen etcher Training Clean SNF Paul G Allen L107 Cleanroom
Woollam
woollam
Woollam Training "All" SNF Paul G Allen L107 Cleanroom
Wet Bench Flexcorr 4
wbflexcorr-4
Wet Bench Flexcorr 1and2 and 3and4 Training Flexible SNF Paul G Allen L107 Cleanroom

Manual wet etching of non-standard materials using acids or bases. Hot plate, HF bath, and controlled temperature bath available. GaAs not allowed.

Oxford Dielectric Etcher
oxford-rie
Oxford Dielectric Etcher Training Flexible SNF Paul G Allen L107 Cleanroom

4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers

RTA AllWin 610
aw610_r
AllWin 610 RTA Training Flexible SNF Paul G Allen L107 Cleanroom
Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly
Tystar LPCVD Tube Training Flexible SNF Paul G Allen L107 Cleanroom
Wet Bench Flexible Solvents 1
wbflexsolv-1
Wet Bench Flexible Solvents 1 and 2 Training Flexible SNF Paul G Allen L107 Cleanroom

Manual solvent cleaning, two ultrasonic baths.

Lam Research TCP 9400 Poly Etcher
lampoly
Lam Research TCP 9400 Poly Etcher Training Clean, Semiclean SNF Paul G Allen L107 Cleanroom

Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.

RTA AllWin 610
aw610_l
AllWin 610 RTA Training Clean SNF Paul G Allen L107 Cleanroom
Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly
Tystar LPCVD Tube Training Clean SNF Paul G Allen L107 Cleanroom
Headway Manual Resist Spinner
headway2
Resist Coat (manual) Headway Manual Training "All" SNF Paul G Allen L107 Cleanroom

Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists

Wet Bench Flexible Solvents 2
wbflexsolv-2
Wet Bench Flexible Solvents 1 and 2 Training Flexible SNF Paul G Allen L107 Cleanroom

Manual solvent cleaning, hot plate

Plasma Therm Versaline LL ICP Dielectric Etcher
PT-Ox
Plasma Therm Versaline LL ICP Dielectric Etcher Training Flexible SNF Paul G Allen L107 Cleanroom

Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)

Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride
Tystar LPCVD Tube Training Clean SNF Paul G Allen L107 Cleanroom
Keyence Digital Microscope VHX-6000
keyence
Microscope Keyence Training "All" SNF Exfab Paul G Allen 104 Stinson
Nanospec 210XP
nanospec2
Nanospec Training "All" SNF Exfab Paul G Allen 104 Stinson

Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Å

Heidelberg MLA 150
heidelberg
Heidelberg Training "All" SNF Exfab Paul G Allen 104 Stinson

Direct Write

Profilometer Alphastep 500
alphastep
Alphastep 500 Profilometer Training Flexible SNF Exfab Paul G Allen 104 Stinson

500Å to 300µm

SEM -Zeiss Merlin
sem-merlin
SEM-Merlin Training "All" SNF Exfab Paul G Allen 104 Stinson

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Equipment name & NEMO ID Technique Cleaning Required Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Process Temperature Range Chemicals Gases Substrate Size Substrate Type Maximum Load
Tystar Bank 2 Tube 7 Nitride
B2T7 Flexible Nitride
Flexible
25.00 Å - 2.00 μm
420 °C - 800 °C
,
,
50
Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO
Clean
25.00 Å - 2.00 μm
300 °C - 500 °C
,
,
100
Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 800 °C
,
,
50
Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 630 °C
,
,
50
Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 630 °C
,
,
50
Tystar Bank 3 Tube 9
B3T9 Clean Oxide
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
,
,
100
Wet Bench Clean 1
wbclean-1
Clean
,
,
25
Wet Bench Clean 2
wbclean-2
Clean
,
,
25
Wet Bench Clean_res- hotphos
wbclean_res-hotphos
Clean
,
,
Wet Bench Clean_res-hf
wbclean_res-hf
Clean
,
,
Wet Bench Clean_res-piranha
wbclean_res-piranha
Clean
,
,
Wet Bench CMOS Metal
wbclean3
Semiclean
,
,
25 wafers
Wet Bench Decontamination
wbdecon
Clean
,
,
Wet Bench Flexcorr 1
wbflexcorr-1
Flexible ,
,
,
,
,
,
,
,
,
,
Wet Bench Flexcorr 2
wbflexcorr-2
Flexible ,
,
,
,
,
,
,
,
,
,
Wet Bench Flexcorr 3
wbflexcorr-3
Flexible ,
,
,
,
,
,
,
,
,
Wet Bench Flexcorr 4
wbflexcorr-4
Flexible
Wet Bench Flexible Solvents
wbflexsolv
Flexible ,
,
,
,
,
,
,
,
,
,
Wet Bench Flexible Solvents 1
wbflexsolv-1
Flexible ,
,
,
,
,
,
,
,
,
,
Wet Bench Flexible Solvents 2
wbflexsolv-2
Flexible ,
,
,
,
,
,
,
,
,
,

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