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4 inch wafer

Short Name:

4"

The following is a list of equipment where 4 inch round substrates are allowed.

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Oven 90°C prebake oven90	Resist Prebake Oven 90°C Training	"All"	SNF Paul G Allen L107 Cleanroom	Bakes wafers after resist coating.
SVG Develop Track 2 svgdev2	SVG Resist Develop tracks 1 and 2 Training	"All"	SNF Paul G Allen L107 Cleanroom	Automatic development.
Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Tystar Atmospheric Tube Training	Clean	SNF Paul G Allen L107 Cleanroom
Fiji 3 ALD fiji3	ALD Fiji 3 Training	Flexible	SNF Paul G Allen L107 Cleanroom	Restricted to non-conductive films only
Wet Bench Miscellaneous wbmiscres	Wet Bench Miscellaneous Photoresist Training	Flexible	SNF Paul G Allen L107 Cleanroom	Manual development of resist in beakers and Headway (manual resist spinner). SNF approved developers (acid or base). No solvents!
Matrix Plasma Resist Strip matrix	Matrix Plasma Resist Strip Training	Flexible	SNF Paul G Allen L107 Cleanroom	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.
Karl Suss MA-6 Contact Aligner karlsuss2	Contact Aligner Karl Suss MA-6 Training	"All"	SNF Paul G Allen L107 Cleanroom	1:1 Contact Aligner. Backside align.
Nanospec 3 nanospec3	Nanospec 3 Training	"All"	SNF Paul G Allen L107 Cleanroom
Tystar Bank 3 Tube 9 B3T9 Clean Oxide	Tystar Atmospheric Tube Training	Clean	SNF Paul G Allen L107 Cleanroom
MVD mvd	MVD Training	Flexible	SNF Paul G Allen L107 Cleanroom	Reactor located inside glovebox
Wet Bench Resist Strip wbresstrip-1	Wet Bench Resist Strip	Clean (Ge), Semiclean, Flexible	SNF Paul G Allen L107 Cleanroom	Wet Resist Removal: SRS-100 or PRS1000
Xactix Xenon Difluoride Etcher xactix	Xactix Xenon Difluoride Etcher Training	"All"	SNF Paul G Allen L107 Cleanroom	Isotropic Si etching; can be used for backside Si removal on small pieces
Karl Suss MA-6 Contact Aligner karlsuss	Contact Aligner Karl Suss MA-6 Training	"All"	SNF Paul G Allen L107 Cleanroom	1:1 Contact Aligner. Backside align, including IR.
Tystar Bank 1 Tube 1 Anneal B1T1 Flexible Oxide	Tystar Atmospheric Tube Training	Flexible	SNF Paul G Allen L107 Cleanroom
Savannah ALD savannah	ALD Savannah Training	Flexible	SNF Paul G Allen L107 Cleanroom
Wet Bench Clean_res-hf wbclean_res-hf	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF Paul G Allen L107 Cleanroom	Resist as mask allowed
Plasma Therm Versaline LL ICP Deep Silicon Etcher PT-DSE	Plasma Therm Versaline LL ICP Deep Silicon Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Single wafer; Bosch process for Si etching; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; need a support wafer for through wafer etching, can be used for Isotropic Si Etching
ASML PAS 5500/60 i-line Stepper asml	Stepper ASML PAS 5500/60 i-line Training	"All"	SNF Paul G Allen L107 Cleanroom	5:1 reducing stepper
Oxford Plasma Pro ICP-RIE Ox-gen	Ox-gen etcher Training	Clean	SNF Paul G Allen L107 Cleanroom
Woollam woollam	Woollam Training	"All"	SNF Paul G Allen L107 Cleanroom

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Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Process Temperature Range	Gases	Substrate Size	Substrate Type	Maximum Load
Nanospec 3 nanospec3	Characterization > Reflectometry		"All"							Pieces 2" 3" 4" 6"
Oven (White) white-oven	Photolithography > Resist Bake > Oven Bake		Flexible					0 °C - 200 °C		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Oven 110°C post-bake oven110	Photolithography > Resist Bake > Oven Bake > Resist Post Bake		"All"					110 ºC		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
Oven 90°C prebake oven90	Photolithography > Resist Bake > Oven Bake > Resist Prebake		"All"					90 ºC		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Oven BlueM 200°C to 430°C bluem	Photolithography > Resist Bake > Oven Bake		Flexible					0 °C - 430 °C		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Oxford Dielectric Etcher oxford-rie	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Si3N4 SiC SiO₂ PI	C				Ar CF₄ CHF₃ N₂ O₂ SF₆	4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	1
Oxford III-V etcher Ox-35	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Flexible	GaAs	AlGaN AlInP GaN InGaP InSb				Ar BCl₃ CH₄ Cl₂ H₂ HBr N₂ O₂ SF₆	4"		1
Oxford Plasma Pro ICP-RIE Ox-gen	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Clean					-10 °C - 60 °C	BCl₃ CF₄ Cl₂ O₂ SF₆	Pieces 4" 6"	(Si) , (SiGe) , (SiO2)	1
Oxford Plasma Pro ICP-RIE ALE Ox-ALE	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Flexible	III-V materials Various 2D Materials	C Nb Si Si3N4 SiO₂ SiON Poly Silicon			0 °C - 40 °C	Ar BCl₃ C₄F₈ Cl₂ H₂ HBr O₂ SF₆	Pieces 4" 6" 8"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (III-V)	1
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Deposition		Flexible				poly(p-xylylene)			Pieces 2" 3" 4" 6" 8" Cones Disks Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)
Plasma Therm Versaline LL ICP Deep Silicon Etcher PT-DSE	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Flexible	Si					Ar C₄F₈ O₂ SF₆	4" 6"		1
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Flexible	C Si3N4 SiC SiO₂	Various C-based				Ar C₄F₈ CF₄ CHF₃ H₂ He N₂ O₂	4" 6"		1
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Flexible	Metals or metal compounds with volatile byproducts Al	GaN				Ar BCl₃ CF₄ CH₄ Cl₂ N₂ O₂ SF₆	4" 6"		1
Plasmaetch PE-50 plasma-etch	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist					78% N₂, 21% O₂, ~1% Ar	Pieces 2" 3" 4" 6"		Multiple
PlasmaTherm Shuttlelock PECVD System ccp-dep	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD		"All"			100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON	100 °C - 350 °C	5% SiH₄ in He CH₄ He N₂ NH₃ SF₆ Nitrous	Pieces 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (LiNb)	4
PlasmaTherm Versaline HDP CVD System hdpcvd	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD		"All"			500.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON	50 °C - 150 °C	Ar N₂ O₂ SF₆ SiH₄	Pieces 4"		1
Profilometer Alphastep 500 alphastep	Characterization > Surface Analysis > Profilometer > Step Profile		Flexible							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Profilometer AlphaStep D-300 alphastep2	Characterization > Surface Analysis > Profilometer > Step Profile		Flexible							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Prometrix Resistivity Mapping System prometrix	Characterization > Sheet Resistance Measurement		"All"							2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
RTA AllWin 610 aw610_l	Annealing & Oxidation > Rapid Thermal Annealing	Pre-Diffusion Clean	Clean					21 °C - 1150 °C	4% H₂ in N₂ Ar N₂ NH₃ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	1 wafer

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