The following is a list of equipment where 4 inch round substrates are allowed.
Resist will be removed
Spray coating of resists
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Manual wet etching of non-standard materials using acids or bases. Hot Plate available. GaAs not allowed.
Automatic Resist spinning and bake
To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -
Substrates in clean category: Pre-Diffusion Clean
For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Manual solvent cleaning of substrates or resist removal.
Pieces need a carrier wafer; Isotropic Etching
reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing -
CO2 drying after release of micromachined devices
Two programs: Singe and HMDS prime or Singe only. No Resist allowed!
For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance