The following is a list of equipment where 4 inch round substrates are allowed.
5:1 reducing stepper
Manual wet etching of non-standard materials using acids or bases. Hot plate, HF bath, and controlled temperature bath available. GaAs not allowed.
4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers
Manual solvent cleaning, two ultrasonic baths.
Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.
Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Manual solvent cleaning, hot plate
Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)
Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Ã
Direct Write
500Å to 300µm