The following is a list of equipment where 4 inch round substrates are allowed.
For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.