The following is a list of equipment where 4 inch round substrates are allowed.
Convection in N2. Cure. Programmable.
Bakes wafers after resist coating.
Bakes wafers with resist after the development, called post-bake.
For LOL2000 bake or bakes which are not allowed in the other ovens and need higher temperatures, up to 200C, programmable.
Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Ã
Reactor located inside glovebox
Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode
Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.
reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
SU-8, LOL, Ebeam resists allowed. No Acetone allowed.
Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.
1:1 Contact Aligner. Backside align.
1:1 Contact Aligner. Backside align, including IR.