4 inch wafer

Short Name:

4"

The following is a list of equipment where 4 inch round substrates are allowed.

Equipment Tables

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Savannah ALD savannah	ALD Savannah Training	Flexible	SNF Paul G Allen L107 Cleanroom
Samco PC300 Plasma Etch System samco	Samco Training	Flexible	SNF Paul G Allen L107 Cleanroom
RTA AllWin 610 aw610_r	AllWin 610 RTA Training	Flexible	SNF Paul G Allen L107 Cleanroom
RTA AllWin 610 aw610_l	AllWin 610 RTA Training	Clean	SNF Paul G Allen L107 Cleanroom
Prometrix Resistivity Mapping System prometrix	Prometrix Training	"All"	SNF Paul G Allen L107 Cleanroom	3 Probe Heads for different cleanliness groups.
Profilometer AlphaStep D-300 alphastep2	AlphaStep2 Training	Flexible	SNF Exfab Paul G Allen 104 Stinson
Profilometer Alphastep 500 alphastep	Alphastep 500 Profilometer Training	Flexible	SNF Exfab Paul G Allen 104 Stinson	500Å to 300µm
PlasmaTherm Versaline HDP CVD System hdpcvd	PlasmaTherm Versaline HDP CVD System Training	"All"	SNF Paul G Allen L107 Cleanroom	To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
PlasmaTherm Shuttlelock PECVD System ccp-dep	PlasmaTherm Shuttlelock PECVD System Training	"All"	SNF Paul G Allen L107 Cleanroom	To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Plasmaetch PE-50 plasma-etch	Plasmaetch PE-50 Training	Flexible	SNF Exfab Paul G Allen 155A Venice	Low power, high pressure plasma; low bias, minimal damage. Often used for surface treatment.
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Plasma Therm Versaline LL ICP Metal Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Plasma Therm Versaline LL ICP Dielectric Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)
Plasma Therm Versaline LL ICP Deep Silicon Etcher PT-DSE	Plasma Therm Versaline LL ICP Deep Silicon Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Single wafer; Bosch process for Si etching; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; need a support wafer for through wafer etching, can be used for Isotropic Si Etching
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Parylene Coater Training	Flexible	SNF Exfab Paul G Allen 155 Mavericks
Oxford Plasma Pro PECVD Ox-PECVD	Oxford Plasma Pro PECVD Training	Semiclean, Flexible	SNF Paul G Allen L107 Cleanroom
Oxford Plasma Pro ICP-RIE Ox Ox-Ox	Oxford Plasma Pro ICP-RIE Ox Training	Clean	SNF Paul G Allen L107 Cleanroom
Oxford Plasma Pro ICP-RIE ALE Ox-ALE	Oxford Plasma Pro ICP-RIE ALE Training	Flexible	SNF Paul G Allen L107 Cleanroom
Oxford Plasma Pro ICP-RIE Ox-gen	Ox-gen etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom
Oxford III-V etcher Ox-35	Oxford III-V etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Metal etching or Metal hard masks are not allowed. 4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers; Restrictions: III-V materials only.
Oxford Dielectric Etcher oxford-rie	Oxford Dielectric Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers

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