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4 inch wafer

Short Name: 
4"

The following is a list of equipment where 4 inch round substrates are allowed.

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Equipment name & NEMO ID Training Required & Charges Cleanliness Locationsort descending Notes
RTA AllWin 610
aw610_r
AllWin 610 RTA Training Flexible SNF Paul G Allen L107 Cleanroom
Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly
Tystar LPCVD Tube Training Flexible SNF Paul G Allen L107 Cleanroom
Wet Bench Flexible Solvents 1
wbflexsolv-1
Wet Bench Flexible Solvents 1 and 2 Training Flexible SNF Paul G Allen L107 Cleanroom

Manual solvent cleaning, two ultrasonic baths.

Lam Research TCP 9400 Poly Etcher
lampoly
Lam Research TCP 9400 Poly Etcher Training Clean, Semiclean SNF Paul G Allen L107 Cleanroom

Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.

RTA AllWin 610
aw610_l
AllWin 610 RTA Training Clean SNF Paul G Allen L107 Cleanroom
Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly
Tystar LPCVD Tube Training Clean SNF Paul G Allen L107 Cleanroom
Headway Manual Resist Spinner
headway2
Resist Coat (manual) Headway Manual Training "All" SNF Paul G Allen L107 Cleanroom

Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists

Wet Bench Flexible Solvents 2
wbflexsolv-2
Wet Bench Flexible Solvents 1 and 2 Training Flexible SNF Paul G Allen L107 Cleanroom

Manual solvent cleaning, hot plate

Plasma Therm Versaline LL ICP Dielectric Etcher
PT-Ox
Plasma Therm Versaline LL ICP Dielectric Etcher Training Flexible SNF Paul G Allen L107 Cleanroom

Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)

Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride
Tystar LPCVD Tube Training Clean SNF Paul G Allen L107 Cleanroom
micromanipulator6000 IV-CV probe station
micromanipulator6000
micromanipulator6000 IV-CV probe station Training "All" SNF Exfab Paul G Allen 151 Ocean
Sinton Lifetime Tester
sinton-lifetime-tester
Sinton Lifetime Tester Training Flexible SNF Exfab Paul G Allen 151 Ocean
LEI1500 Contactless Sheet Resistance Mapping
eddycurrent
LEI1500 Contactless Sheet Resistance Mapping Training "All" SNF Exfab Paul G Allen 151 Ocean
DISCO Wafer Saw
DISCO wafersaw
Wafersaw DISCO training Flexible SNF Exfab Paul G Allen 159 Capitola
Plasmaetch PE-50
plasma-etch
Plasmaetch PE-50 Training Flexible SNF Exfab Paul G Allen 155A Venice

Low power, high pressure plasma; low bias, minimal damage. Often used for surface treatment.

Lesker Sputter
lesker-sputter
Sputter Lesker 1&2 Training Flexible SNF Exfab Paul G Allen 155A Venice

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

AJA Evaporator
aja-evap
Evaporator AJA training Flexible SNF Exfab Paul G Allen 155A Venice

For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance

First Nano carbon nanotube CVD furnace
cvd-nanotube
cvd-nanotube training Flexible SNF Exfab Paul G Allen L119 Año Nuevo

Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density

Aixtron Black Magic graphene CVD furnace
aixtron-graphene
CVD graphene furnace Aixtron Black Magic training Flexible SNF Exfab Paul G Allen L119 Año Nuevo
Aixtron MOCVD - III-N system
aix-ccs
MOCVD - III-N Aixtron training Clean (MOCVD) SNF MOCVD Paul G Allen 213XA

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For Sapphire clean: SC1, SC2.
For GaN template on Si or Sapphire: Piranha, SC1, SC2.

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Equipment name & NEMO ID Technique Cleaning Required Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Developer Process Temperature Range Chemicals Gases Substrate Size Substrate Type Maximum Load
Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 800 °C
,
,
50
Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 630 °C
,
,
50
Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 630 °C
,
,
50
Tystar Bank 3 Tube 9
B3T9 Clean Oxide
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
,
,
100
Wet Bench Clean 1
wbclean-1
Clean
,
,
25
Wet Bench Clean 2
wbclean-2
Clean
,
,
25
Wet Bench Clean_res- hotphos
wbclean_res-hotphos
Clean
,
,
Wet Bench Clean_res-hf
wbclean_res-hf
Clean
,
,
Wet Bench Clean_res-piranha
wbclean_res-piranha
Clean
,
,
Wet Bench CMOS Metal
wbclean3
Semiclean
,
,
25 wafers
Wet Bench Decontamination
wbdecon
Clean
,
,
Wet Bench Flexcorr 1
wbflexcorr-1
Flexible ,
,
,
,
,
,
,
,
,
,
Wet Bench Flexcorr 2
wbflexcorr-2
Flexible ,
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,
Wet Bench Flexcorr 3
wbflexcorr-3
Flexible ,
,
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,
Wet Bench Flexcorr 4
wbflexcorr-4
Flexible
Wet Bench Flexible Solvents
wbflexsolv
Flexible ,
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,
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,
Wet Bench Flexible Solvents 1
wbflexsolv-1
Flexible ,
,
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,
Wet Bench Flexible Solvents 2
wbflexsolv-2
Flexible ,
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Wet Bench Miscellaneous
wbmiscres
Flexible ,
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,
Wet Bench Resist Strip
wbresstrip-1
Clean (Ge), Semiclean, Flexible
20 °C - 60 °C
,
,
,
,
,
,
25 4 inch wafers

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