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4 inch wafer

Short Name:

4"

The following is a list of equipment where 4 inch round substrates are allowed.

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Oven (White) white-oven	White Oven Training	Flexible	SNF Paul G Allen L107 Cleanroom	For LOL2000 bake or bakes which are not allowed in the other ovens and need higher temperatures, up to 200C, programmable.
Intlvac Evaporator Intlvac_evap	Evaporator Intlvac Training	Clean, Semiclean	SNF Paul G Allen L107 Cleanroom
Oxford Plasma Pro ICP-RIE ALE Ox-ALE	Oxford Plasma Pro ICP-RIE ALE Training	Flexible	SNF Paul G Allen L107 Cleanroom
Wet Bench Flexcorr 1 wbflexcorr-1	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Paul G Allen L107 Cleanroom	Manual wet etching of non-standard materials. Hot plate available. GaAs allowed in personal labware only.
MRC Reactive Ion Etcher mrc	MRC Reactive Ion Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode
Oven BlueM 200°C to 430°C bluem	Blue M Oven Training	Flexible	SNF Paul G Allen L107 Cleanroom	Convection in N2. Cure. Programmable.
SVG Resist Coat Track 2 svgcoat2	SVG Resist Coat Tracks 1 and 2 Training	"All"	SNF Paul G Allen L107 Cleanroom	Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide	Tystar Atmospheric Tube Training	Flexible	SNF Paul G Allen L107 Cleanroom
Wet Bench Flexcorr 2 wbflexcorr-2	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Paul G Allen L107 Cleanroom	Manual wet etching of non-standard materials. Hot pots available. GaAs allowed in personal labware only
Gasonics Aura Asher gasonics	Resist Removal Dry Gasonics Training	Clean, Semiclean	SNF Paul G Allen L107 Cleanroom	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.
Oven 110°C post-bake oven110	Resist Postbake Oven 110°C Training	"All"	SNF Paul G Allen L107 Cleanroom	Bakes wafers with resist after the development, called post-bake.
Wet Bench Clean 2 wbclean-2	Wet Bench Clean1and2 Training	Clean	SNF Paul G Allen L107 Cleanroom	No resist allowed. Resist should have been removed at the wbclean_res-piranha
Tystar Bank 2 Tube 5 B2T5 Clean Anneal	Tystar Atmospheric Tube Training	Clean	SNF Paul G Allen L107 Cleanroom
Fiji 2 ALD fiji2	ALD Fiji 1 and 2 Training	Flexible	SNF Paul G Allen L107 Cleanroom
Wet Bench CMOS Metal wbclean3	Wet Bench CMOS Metal (wbclean3) Training	Semiclean	SNF Paul G Allen L107 Cleanroom	Al, Ti, or W wet etching or oxide etching
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Plasma Therm Versaline LL ICP Metal Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)
Oven 90°C prebake oven90	Resist Prebake Oven 90°C Training	"All"	SNF Paul G Allen L107 Cleanroom	Bakes wafers after resist coating.
SVG Develop Track 2 svgdev2	SVG Resist Develop tracks 1 and 2 Training	"All"	SNF Paul G Allen L107 Cleanroom	Automatic development.
Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Tystar Atmospheric Tube Training	Clean	SNF Paul G Allen L107 Cleanroom
Fiji 3 ALD fiji3	ALD Fiji 3 Training	Flexible	SNF Paul G Allen L107 Cleanroom	Restricted to non-conductive films only

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Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Resist	Developer	Process Temperature Range	Gases	Sample Size Limits	Substrate Size	Substrate Type	Maximum Load
RTA AllWin 610 aw610_r	Annealing & Oxidation > Rapid Thermal Annealing		Flexible							21 °C - 1150 °C	4% H₂ in N₂ Ar N₂ NH₃ O₂		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)
Samco PC300 Plasma Etch System samco	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI					20 ºC	CF₄ O₂ SF₆		Pieces 2" 3" 4" 6" 8" Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	Four 4" wafers or two 6" wafers and one 8" wafer
Savannah ALD savannah	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD		Flexible			1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia			24 °C - 250 °C	N₂		Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
SEM -Zeiss Merlin sem-merlin	Characterization > Surface Analysis > Microscopy > Scanning Electron Microscopy (SEM)		"All"			0.00 mm - 35.00 mm						6 in wafer	Pieces 2" 3" 4" 6" Disks	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb)	one
Sensofar S-neox s-neox	Characterization > Surface Analysis > Profilometer > Interferometry Characterization > Surface Analysis > Profilometer > Optical Profilometer		"All"										Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Sinton Lifetime Tester sinton-lifetime-tester	Characterization > Minority Carrier Characterization		Flexible										Pieces 2" 3" 4" 6"
SPTS uetch vapor etch uetch	Etching > Vapor Etching		"All"	SiO₂							C₂H₅OH HF vapor		Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1
SVG Develop Track 1 svgdev	Photolithography > Resist Develop > Resist Develop (automatic)		"All"						MF-26A developer				4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Develop Track 2 svgdev2	Photolithography > Resist Develop > Resist Develop (automatic)		"All"						MF-26A developer				4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Resist Coat Track 1 svgcoat	Photolithography > Resist coat > Resist Coat (automatic)		"All"					Shipley 3612 resist SPR220-3 resist SPR220-7					4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Resist Coat Track 2 svgcoat2	Photolithography > Resist coat > Resist Coat (automatic)		"All"					AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist					4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
Technics Asher technics	Etching > Dry Etching Cleaning > Resist Removal > Dry Resist Removal		Flexible	Resist	dimethylpolysiloxane poly(p-xylylene) PI						O₂		Pieces 4" 6" 8"	(Si) , (SiO2) , (SiO₂)	Four 4" wafers to pieces, one 6" or 8" wafer
Tystar Bank 1 Tube 1 Anneal B1T1 Flexible Oxide	Annealing & Oxidation > Oxide Growth (furnace)		Flexible			25.00 Å - 2.00 μm				400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide	Annealing & Oxidation > Annealing (furnace) Annealing & Oxidation > Oxide Growth (furnace)		Flexible			25.00 Å - 2.00 μm	SiO₂			400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Flexible			25.00 Å - 2.00 μm	Ge Si SiGe Poly Silicon			420 °C - 630 °C	B₂H₆ GeH₄ N₂ PH₃ SiH₄		4" 6"	(Si) , (SiGe) , (SiO2) , (Ge) , (SiC) , (III-V)	100
Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Flexible			25.00 Å - 2.00 μm	SiO₂			300 °C - 500 °C	N₂ O₂ PH₃ SiH₄		4" 6"	(Si) , (SiGe) , (SiO2) , (Ge) , (SiC) , (III-V)	100
Tystar Bank 2 Tube 5 B2T5 Clean Anneal	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm				400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	SiO₂			400 °C - 1100 °C	4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 2 Tube 7 Nitride B2T7 Clean Nitride	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	Si3N4 SiON			420 °C - 800 °C	NH₃ DCS		4" 6"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Clean			25.00 Å - 2.00 μm	SiO₂			300 °C - 500 °C	N₂ O₂ PH₃ SiH₄		4" 6"	(Si) , (SiGe) , (SiO2)	100

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