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4 inch wafer

Short Name:

4"

The following is a list of equipment where 4 inch round substrates are allowed.

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
EVG 101 Spray Coater evgspraycoat	Spray Coater EVG 101 Training	All	SNF Paul G Allen L107 Cleanroom	Spray coating of resists
Tencor P2 Profilometer p2	Tencor P2 Profilometer Training	Clean, Semiclean	SNF Paul G Allen L107 Cleanroom	Step height measurement range 500 Å to 80 µm
Heidelberg MLA 150 - 2 heidelberg2	Heidelberg Training	All	SNF Paul G Allen L107 Cleanroom	Direct Write
Tystar Bank 2 Tube 7 Nitride B2T7 Clean Nitride	Tystar LPCVD Tube Training	Clean	SNF Paul G Allen L107 Cleanroom
AMAT Centurion Epitaxial System epi2	Epitaxial AMAT Centurion Training	Clean	SNF Paul G Allen L107 Cleanroom	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Wet Bench Flexcorr 3 wbflexcorr-3	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Paul G Allen L107 Cleanroom	Manual wet etching of non-standard materials using acids or bases. Hot Plate available. GaAs not allowed.
SVG Resist Coat Track 1 svgcoat	SVG Resist Coat Tracks 1 and 2 Training	All	SNF Paul G Allen L107 Cleanroom	Automatic Resist spinning and bake
Technics Asher technics	Technics Asher Training	Flexible	SNF Paul G Allen L107 Cleanroom
Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	Tystar LPCVD Tube Training	Flexible	SNF Paul G Allen L107 Cleanroom
PlasmaTherm Shuttlelock PECVD System ccp-dep	PlasmaTherm Shuttlelock PECVD System Training	All	SNF Paul G Allen L107 Cleanroom	To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Wet Bench Flexible Solvents wbflexsolv	Wet Bench Flexible Solvents 1 and 2 Training	Flexible	SNF Paul G Allen L107 Cleanroom	Manual solvent cleaning of substrates or resist removal.
SPTS uetch vapor etch uetch	SPTS uetch vapor etch Training	All	SNF Paul G Allen L107 Cleanroom	Pieces need a carrier wafer; Isotropic Etching
Prometrix Resistivity Mapping System prometrix	Prometrix Training	All	SNF Paul G Allen L107 Cleanroom	3 Probe Heads for different cleanliness groups.
Samco PC300 Plasma Etch System samco	Samco Training	Flexible	SNF Paul G Allen L107 Cleanroom
Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	Tystar LPCVD Tube Training	Clean	SNF Paul G Allen L107 Cleanroom
PlasmaTherm Versaline HDP CVD System hdpcvd	PlasmaTherm Versaline HDP CVD System Training	All	SNF Paul G Allen L107 Cleanroom	To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Critical Point Dryer Tousimis Automegasamdri-936 cpd	Critical Point Dryer Training	Flexible	SNF Paul G Allen L107 Cleanroom	CO2 drying after release of micromachined devices
HMDS Vapor Prime Oven, YES yes	YES Prime Oven Training	All	SNF Paul G Allen L107 Cleanroom	Two programs: Singe and HMDS prime or Singe only. No Resist allowed!
Flexus 2320 Stress Tester stresstest	Stress Tester Flexus 2320 Training	All	SNF Paul G Allen L107 Cleanroom
Lesker2 Sputter lesker2-sputter	Sputter Lesker 1&2 Training	Semiclean	SNF Paul G Allen L107 Cleanroom	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

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Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Materials User Supplied	Minimum Resolution	Exposure Wavelength	Mask Size	Max Exposure Area	Resist	Process Temperature Range	Chemicals	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
Headway 3 Manual Resist Spinner headway3	Photolithography > Resist coat > Resist Coat (manual)	All										Resists Shipley 3612 resist SPR220-3 resist SPR220-7						Pieces 2" 3" 4"		1 piece or wafer
Headway Manual Resist Spinner headway2	Photolithography > Resist coat > Resist Coat (manual)	All										AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one piece or wafer
Heidelberg MLA 150 heidelberg	Photolithography > Exposure > Direct Write	All							405 nm									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Heidelberg MLA 150 - 2 heidelberg2	Photolithography > Exposure > Direct Write	All							375 nm									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
HMDS Vapor Prime Oven, YES yes	Photolithography > Wafer preparation before resist > Singe Photolithography > Wafer preparation before resist > Wafer Prime (HMDS)	All											150 ºC	[(CH₃)₃Si]₂NH				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Intlvac Evaporator Intlvac_evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Clean, Semiclean			0.00 - 0.50 μm	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly												Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	12 4 inch wafers, 2 6 inch wafers
Karl Suss MA-6 Contact Aligner karlsuss	Photolithography > Exposure > Contact Aligner	All							365 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Karl Suss MA-6 Contact Aligner karlsuss2	Photolithography > Exposure > Contact Aligner	All							365 nm or 405 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Keyence Digital Microscope VHX-6000 keyence	Characterization > Surface Analysis > Microscopy	All																Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
KJL Evaporator 1	Deposition > Physical Vapor Deposition (PVD) > Evaporation				200.00 nm	Al Au Cr Cu Ge Ni Pd Pt Ti V									Ar			Pieces 2" 3" 4" 6"		1
Lam Research TCP 9400 Poly Etcher lampoly	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Clean, Semiclean	Si	Ge SiGe											80% He/ 20%O₂ C₂F₆ CF₄ Cl₂ HBr He N₂ O₂			4"	(Si) , (SiGe)	25
Laurell Manual Resist Spinner laurell-R	Photolithography > Resist coat > Resist Coat (manual)	All										Resists SU-8 LOL		(C₅O₂H₈)_n				Pieces 2" 3" 4" 6"
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement	All														8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	1 wafer(2" to 8")
Lesker Sputter lesker-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering	Flexible				Ag Al AlSi Au Co Cr Cu Fe Nb Ni Pd Si SiO₂ Ta Ti TiN W Alumina ITO	CoFeB Ge Hf In₂O₃ LaB₆ Ru Sc Sn TiN WO₃ ZnO₃ ZrY GST Hafnia Moly Ti Tungsten											Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1 4 inch wafer, 1 6 inch wafer
Lesker2 Sputter lesker2-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering	Semiclean			1.00 μm	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly							°C - 800 °C		Ar N₂ O₂			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one 4 inch wafer, one 6 inch wafer
Matrix Plasma Resist Strip matrix	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal	Flexible	Resist	PI											O₂			4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	25
micromanipulator6000 IV-CV probe station micromanipulator6000	Characterization	All																Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb) , (Various)	1x4" wafer
MRC Reactive Ion Etcher mrc	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)	Flexible	Metal oxides Metals Metals or metal compounds with volatile byproducts Metals or metal compounds without volatile byproducts Au Ni poly(p-xylylene) Pt Si Si3N4 SiO₂ Ti Various 2D Materials Various Dielectrics Various polymers PI Resist	Al AlAs AlGaAs AlGaN AlInP AlN AlSi BiFeO₃ C C C Co CoFeB Cr Cu Er Fe Ga₂O₃ GaAs GaN GaP GaPN Ge Hf HfN III-N materials III-V materials In In₂O₃ InAlN InAs InGaAlN InGaAs InGaAsN InGaN InGaP InN InP InPN InSb Ir LaB₆ LiNb Nb Ni_xO_y NiSi Pd Ru Sc SiC SiGe SiO SiON Sn SnO₂ SrO SrRuO Ta Ta₂O₅ TaN TiN V Various C-based Various polymers W WO₃ WSi₂ Y ZnO₃ Zr ZrY Alumina AZO Hafnia ITO LLZO Moly Moly Oxide Poly Silicon Ti Tungsten Titania YSZ Zirconia											Ar CHClF₂ CHF₃ O₂ SF₆			Pieces 2" 3" 4" 6"		1
MVD mvd	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD	Flexible			1.00 Å - 50.00 nm	C₉H₂₃NO₃Si Various Dielectrics Alumina DETA Hafnia ODS SAMS							24 °C - 150 °C		Ar			Pieces 2" 3" 4" 6" 8"
Nanospec 210XP nanospec2	Characterization > Reflectometry	All																Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)

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