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4 inch wafer

Short Name:

4"

The following is a list of equipment where 4 inch round substrates are allowed.

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Tystar LPCVD Tube Training	Clean	SNF Paul G Allen L107 Cleanroom
Wet Bench Clean_res- hotphos wbclean_res-hotphos	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF Paul G Allen L107 Cleanroom	Resist should have been removed
Wet Bench Clean 1 wbclean-1	Wet Bench Clean1and2 Training	Clean	SNF Paul G Allen L107 Cleanroom	No resist allowed. Resist should have been removed at the wbclean_res-piranha.
Oven (White) white-oven	White Oven Training	Flexible	SNF Paul G Allen L107 Cleanroom	For LOL2000 bake or bakes which are not allowed in the other ovens and need higher temperatures, up to 200C, programmable.
AJA2 Evaporator aja2-evap	Evaporator AJA2 Training	Flexible	SNF Paul G Allen L107 Cleanroom	For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
CHA Solutions II Evaporator cha-evap	Evaporator CHA Training	Flexible	SNF Paul G Allen L107 Cleanroom	For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance
Wet Bench Flexcorr 1 wbflexcorr-1	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Paul G Allen L107 Cleanroom	Manual wet etching of non-standard materials. Hot plate available. GaAs allowed in personal labware only.
MRC Reactive Ion Etcher mrc	MRC Reactive Ion Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode
Oven BlueM 200°C to 430°C bluem	Blue M Oven Training	Flexible	SNF Paul G Allen L107 Cleanroom	Convection in N2. Cure. Programmable.
Intlvac Evaporator Intlvac_evap	Evaporator Intlvac Training	Clean, Semiclean	SNF Paul G Allen L107 Cleanroom
Wet Bench Flexcorr 2 wbflexcorr-2	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Paul G Allen L107 Cleanroom	Manual wet etching of non-standard materials. Hot pots available. GaAs allowed in personal labware only
Gasonics Aura Asher gasonics	Resist Removal Dry Gasonics Training	Clean, Semiclean	SNF Paul G Allen L107 Cleanroom	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.
Oven 110°C post-bake oven110	Resist Postbake Oven 110°C Training	All	SNF Paul G Allen L107 Cleanroom	Bakes wafers with resist after the development, called post-bake.
SVG Resist Coat Track 2 svgcoat2	SVG Resist Coat Tracks 1 and 2 Training	All	SNF Paul G Allen L107 Cleanroom	Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.
Fiji 2 ALD fiji2	ALD Fiji 1 and 2 Training	Flexible	SNF Paul G Allen L107 Cleanroom
Wet Bench CMOS Metal wbclean3	Wet Bench CMOS Metal (wbclean3) Training	Semiclean	SNF Paul G Allen L107 Cleanroom	Al, Ti, or W wet etching or oxide etching
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Plasma Therm Versaline LL ICP Metal Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)
Oven 90°C prebake oven90	Resist Prebake Oven 90°C Training	All	SNF Paul G Allen L107 Cleanroom	Bakes wafers after resist coating.
Wet Bench Clean 2 wbclean-2	Wet Bench Clean1and2 Training	Clean	SNF Paul G Allen L107 Cleanroom	No resist allowed. Resist should have been removed at the wbclean_res-piranha
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide	Tystar Atmospheric Tube Training	Flexible	SNF Paul G Allen L107 Cleanroom

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Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Process Temperature Range	Gases	Substrate Size	Substrate Type	Maximum Load
Nanospec 3 nanospec3	Characterization > Reflectometry		All							Pieces 2" 3" 4" 6"
Optomec Printer optomec-printer	Deposition > Ink		Flexible							Pieces 2" 3" 4" 6"
Oven (White) white-oven	Photolithography > Resist Bake > Oven Bake		Flexible					0 °C - 200 °C		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Oven 110°C post-bake oven110	Photolithography > Resist Bake > Oven Bake > Resist Post Bake		All					110 ºC		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
Oven 90°C prebake oven90	Photolithography > Resist Bake > Oven Bake > Resist Prebake		All					90 ºC		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Oven BlueM 200°C to 430°C bluem	Photolithography > Resist Bake > Oven Bake		Flexible					0 °C - 430 °C		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Oxford Dielectric Etcher oxford-rie	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Si3N4 SiC SiO₂ PI	C				Ar CF₄ CHF₃ N₂ O₂ SF₆	4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	1
Oxford III-V etcher Ox-35	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Flexible	GaAs	AlGaN AlInP GaN InGaP InSb				Ar BCl₃ CH₄ Cl₂ H₂ HBr N₂ O₂ SF₆	4"		1
Oxford Plasma Pro ICP-RIE Ox-gen	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Clean					-10 °C - 60 °C	BCl₃ CF₄ Cl₂ O₂ SF₆	Pieces 4" 6"	(Si) , (SiGe) , (SiO2)	1
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Deposition		Flexible				poly(p-xylylene)			Pieces 2" 3" 4" 6" 8" Cones Disks Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)
Plasma Therm Versaline LL ICP Deep Silicon Etcher PT-DSE	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Flexible	Si					Ar C₄F₈ O₂ SF₆	4" 6"		1
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Flexible	C Si3N4 SiC SiO₂	Various C-based				Ar C₄F₈ CF₄ CHF₃ H₂ He N₂ O₂	4" 6"		1
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Flexible	Metals or metal compounds with volatile byproducts Al	GaN				Ar BCl₃ CF₄ CH₄ Cl₂ N₂ O₂ SF₆	4" 6"		1
Plasmaetch PE-50 plasma-etch	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist					78% N₂, 21% O₂, ~1% Ar	Pieces 2" 3" 4" 6"		Multiple
PlasmaTherm Shuttlelock PECVD System ccp-dep	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD		All			100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON	100 °C - 350 °C	5% SiH₄ in He CH₄ He N₂ NH₃ SF₆ Nitrous	Pieces 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (LiNb)	4
PlasmaTherm Versaline HDP CVD System hdpcvd	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD		All			500.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON	50 °C - 150 °C	Ar N₂ O₂ SF₆ SiH₄	Pieces 4"		1
Profilometer Alphastep 500 alphastep	Characterization > Surface Analysis > Profilometer > Step Profile		Flexible							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Profilometer AlphaStep D-300 alphastep2	Characterization > Surface Analysis > Profilometer > Step Profile		Flexible							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Prometrix Resistivity Mapping System prometrix	Characterization > Sheet Resistance Measurement		All							2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
RTA AllWin 610 aw610_l	Annealing & Oxidation > Rapid Thermal Annealing	Pre-Diffusion Clean	Clean					21 °C - 1150 °C	4% H₂ in N₂ Ar N₂ NH₃ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	1 wafer

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