Short Name:
4"
The following is a list of equipment where 4 inch round substrates are allowed.
Stanford Nanofabrication Facility
Lab User Guide
Equipment Tables
| Equipment name & NEMO ID | Technique | Cleaning Required | Cleanliness | Material Thickness Range | Materials Lab Supplied | Minimum Resolution | Exposure Wavelength | Mask Size | Process Temperature Range | Gases | Substrate Size | Substrate Type | Maximum Load |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CHA Solutions II Evaporator cha-evap |
Flexible |
0.00 -
300.00 nm
|
4"x15 or 6"x3 wafers or pieces | ||||||||||
|
ASML PAS 5500/60 i-line Stepper asml |
"All" |
|
365 nm | 5 inch | |||||||||
|
AMAT Centurion Epitaxial System epi2 |
Pre-Diffusion Clean | Clean |
50.00 Å -
3.00 μm
|
600 °C - 1200 °C
|
1 | ||||||||
|
AJA2 Evaporator aja2-evap |
Flexible |
0.00 -
300.00 nm
|
4"x3 or 6"x1 wafers or pieces | ||||||||||
|
AJA Evaporator aja-evap |
Flexible |
0.00 -
300.00 nm
|
4"x3 or 6"x1 wafers or pieces | ||||||||||
|
Aixtron MOCVD - III-V system aix200 |
Pre-Diffusion Clean | Flexible |
0.00 -
5.00 μm
|
300 °C - 800 °C
|
4"x1 wafer or 2"x1 wafer or 4 pieces | ||||||||
|
Aixtron MOCVD - III-N system aix-ccs |
Clean (MOCVD) |
0.00 -
5.00 μm
|
400 °C - 1300 °C
|
4"x1, 2"X3, pieces | |||||||||
|
Aixtron Black Magic graphene CVD furnace aixtron-graphene |
Flexible |
800 °C - 1100 °C
|
1x4" wafer or Copper/Nickel foil |