Short Name:
4"
The following is a list of equipment where 4 inch round substrates are allowed.
Stanford Nanofabrication Facility
Lab User Guide
Equipment Tables
| Equipment name & NEMO ID | Technique | Cleaning Required | Cleanliness | Primary Materials Etched | Other Materials Etched | Material Thickness Range | Materials Lab Supplied | Materials User Supplied | Minimum Resolution | Exposure Wavelength | Mask Size | Max Exposure Area | Resist | Process Temperature Range | Chemicals | Gases | Sample Size Limits | Resolution Notes | Substrate Size | Substrate Type | Maximum Load |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Oven BlueM 200°C to 430°C bluem |
Flexible |
0 °C - 430 °C
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Oven 90°C prebake oven90 |
"All" |
90 ºC
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Oven 110°C post-bake oven110 |
"All" |
110 ºC
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Oven (White) white-oven |
Flexible |
0 °C - 200 °C
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Optomec Printer optomec-printer |
Flexible | ||||||||||||||||||||
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Nanospec 3 nanospec3 |
"All" | ||||||||||||||||||||
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Nanospec 210XP nanospec2 |
"All" | ||||||||||||||||||||
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MVD mvd |
Flexible |
1.00 Å -
50.00 nm
|
24 °C - 150 °C
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MRC Reactive Ion Etcher mrc |
Flexible |
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1 | ||||||||||||||||||
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Micromanipulator6000 IV-CV probe station micromanipulator6000 |
"All" | 1x4" wafer | |||||||||||||||||||
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Matrix Plasma Resist Strip matrix |
Flexible | 25 | |||||||||||||||||||
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Lesker3 Sputter lesker3-sputter |
Flexible | three 4-inch wafers or one 6 inch | |||||||||||||||||||
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Lesker2 Sputter lesker2-sputter |
Semiclean |
1.00 μm
|
°C - 800 °C
|
one 4 inch wafer, one 6 inch wafer | |||||||||||||||||
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Lesker Sputter lesker-sputter |
Flexible | 1 4 inch wafer, 1 6 inch wafer | |||||||||||||||||||
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LEI1500 Contactless Sheet Resistance Mapping eddycurrent |
"All" | 8 in wafer |
Sensor Transducer Size is 14 mm diameter |
1 wafer(2" to 8") | |||||||||||||||||
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Laurell Manual Resist Spinner laurell-R |
"All" | ||||||||||||||||||||
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Lam Research TCP 9400 Poly Etcher lampoly |
Clean, Semiclean | 25 | |||||||||||||||||||
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KLA-Rapier Deep Reactive Ion Etcher KLA-DSE |
Pre-Diffusion Clean | Clean |
-10 °C - 40 °C
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No through etch on full wafers. Stop 100microns before the through etch and use carrier wafer | |||||||||||||||||
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Keyence Digital Microscope VHX-6000 keyence |
"All" | ||||||||||||||||||||
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Karl Suss MA-6 Contact Aligner karlsuss2 |
"All" |
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365 nm or 405 nm | 4 inch, 5 inch, 7 inch | 5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch |