The following is a list of equipment where 2 inch round substrates are allowed.
Manual solvent cleaning of substrates or resist removal.
reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
CO2 drying after release of micromachined devices
non contact 3D optical profiling
For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode
Isotropic Si etching; can be used for backside Si removal on small pieces
For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance
Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
SU-8, LOL, Ebeam resists allowed. No Acetone allowed.
Low power, high pressure plasma; low bias, minimal damage. Often used for surface treatment.