The following is a list of equipment where 2 inch round substrates are allowed.
Manual solvent cleaning of substrates or masks. Teflon coated metal tweezers cleaning.
SU-8, LOL, Ebeam resists allowed. No Acetone allowed.
1:1 Contact Aligner. Backside align.
1:1 Contact Aligner. Backside align, including IR.
Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Spray coating of resists
CO2 drying after release of micromachined devices
Convection in N2. Cure. Programmable.
500Å to 300µm
Bakes wafers with resist after the development, called post-bake.
Bakes wafers after resist coating.
For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.