The following is a list of equipment where 2 inch round substrates are allowed.
Bakes wafers after resist coating.
Manual solvent cleaning, two ultrasonic baths.
1:1 Contact Aligner. Backside align.
Manual solvent cleaning, hot plate
1:1 Contact Aligner. Backside align, including IR.
Manual solvent cleaning of substrates or masks. Teflon coated metal tweezers cleaning.
Direct Write
Restricted to non-conductive films only
Manual wet etching of non-standard materials using acids or bases. Hot Plate available. GaAs not allowed.
Reactor located inside glovebox
Manual solvent cleaning of substrates or resist removal.
reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
CO2 drying after release of micromachined devices
non contact 3D optical profiling
For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance