The following is a list of equipment where 2 inch round substrates are allowed.
N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Low power, high pressure plasma; low bias, minimal damage. Often used for surface treatment.
For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Manual solvent cleaning, hot plate
1:1 Contact Aligner. Backside align, including IR.
Manual solvent cleaning of substrates or masks. Teflon coated metal tweezers cleaning.