Silicon Nitride | Stanford Nanofabrication Facility

Chemical Formula:

Si3N4

Deposited Silicon Nitride (commonally called "nitride') is used as an isulator in traditional semiconductors, a masking layer or a stuctural layer in some mechanical applications. LPCVD: Thermco Nitride Deposition Furnace or PECVD: Low stress Silicon nitride is deposited in the PlasmaTherm Shuttlelock PECVD System (ccp-dep) by the reaction between silane (5% Silane in He) and nitrogen. In the HDPCVD system, 100% silane and N2 are the reactants to produce silicon nitride film. or ALD: atomic layer deposition

Link to Silicon Nitride Wet Etching Technique

Deposition Equipment
Equipment name & NEMO ID	Cleanliness	Location	Material Thickness Range	Approved Materials supplied by Lab
Fiji 2 ALD fiji2	Flexible	SNF Paul G Allen L107 Cleanroom	1.00 Å - 50.00 nm	Metal oxides Al₂O₃ Ga₂O₃ HfN HfO₂ In₂O₃ In_xSn_yO_z MoO₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN TiO₂ Various Dielectrics ZrO₂
PlasmaTherm Shuttlelock PECVD System ccp-dep	"All"	SNF Paul G Allen L107 Cleanroom	100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON
PlasmaTherm Versaline HDP CVD System hdpcvd	"All"	SNF Paul G Allen L107 Cleanroom	500.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON
Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	Clean	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	Si3N4 SiON
Tystar Bank 2 Tube 7 Nitride B2T7 Flexible Nitride	Flexible	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	Si3N4 SiON
Oxford Plasma Pro PECVD Ox-PECVD	Semiclean Flexible	SNF Paul G Allen L107 Cleanroom	100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON

Etch Equipment
Equipment name & NEMO ID	Cleanliness	Location	Primary Materials Etched	Other Materials Etched
Wet Bench Clean_res- hotphos wbclean_res-hotphos	Clean	SNF Paul G Allen L107 Cleanroom	Si3N4
Wet Bench Flexcorr 1 wbflexcorr-1	Flexible	SNF Paul G Allen L107 Cleanroom	Metals Al Au Cr Si SiO₂ Resist	GaAs Si3N4 Ti W
MRC Reactive Ion Etcher mrc	Flexible	SNF Paul G Allen L107 Cleanroom	Metal oxides Metals Metals or metal compounds with volatile byproducts Metals or metal compounds without volatile byproducts Au Ni poly(p-xylylene) Pt Si Si3N4 SiO₂ Ti Various 2D Materials Various Dielectrics Various polymers PI Resist	Al AlAs AlGaAs AlGaN AlInP AlN AlSi BiFeO₃ C C C Co CoFeB Cr Cu Er Fe Ga₂O₃ GaAs GaN GaP GaPN Ge Hf HfN III-N materials III-V materials In In₂O₃ InAlN InAs InGaAlN InGaAs InGaAsN InGaN InGaP InN InP InPN InSb Ir LaB₆ LiNb Nb Ni_xO_y NiSi Pd Ru Sc SiC SiGe SiO SiON Sn SnO₂ SrO SrRuO Ta Ta₂O₅ TaN TiN V Various C-based Various polymers W WO₃ WSi₂ Y ZnO₃ Zr ZrY Alumina AZO Hafnia ITO LLZO Moly Moly Oxide Poly Silicon Ti Tungsten Titania YSZ Zirconia
Oxford Dielectric Etcher oxford-rie	Flexible	SNF Paul G Allen L107 Cleanroom	Si3N4 SiC SiO₂ PI	C
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Flexible	SNF Paul G Allen L107 Cleanroom	C Si3N4 SiC SiO₂	Various C-based
Samco PC300 Plasma Etch System samco	Flexible	SNF Paul G Allen L107 Cleanroom	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI
Oxford Plasma Pro ICP-RIE ALE Ox-ALE	Flexible	SNF Paul G Allen L107 Cleanroom	III-V materials Various 2D Materials	C Nb Si Si3N4 SiO₂ SiON Poly Silicon
Oxford Plasma Pro ICP-RIE Ox Ox-Ox	Clean	SNF Paul G Allen L107 Cleanroom	Si Si3N4 SiO₂ Poly Silicon