Silicon Carbide

Chemical Formula:

SiC

Silicon carbide can deposited in the ccp system by the reaction between silane and methane.

Deposition Equipment
Equipment name & NEMO ID	Cleanliness	Location	Material Thickness Range	Approved Materials supplied by Lab
Oxford Plasma Pro PECVD Ox-PECVD	Semiclean Flexible	SNF Paul G Allen L107 Cleanroom	100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON
PlasmaTherm Shuttlelock PECVD System ccp-dep	"All"	SNF Paul G Allen L107 Cleanroom	100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON
PlasmaTherm Versaline HDP CVD System hdpcvd	"All"	SNF Paul G Allen L107 Cleanroom	500.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON

Etch Equipment
Equipment name & NEMO ID	Cleanliness	Location	Primary Materials Etched	Other Materials Etched
MRC Reactive Ion Etcher mrc	Flexible	SNF Paul G Allen L107 Cleanroom	Metal oxides Metals Metals or metal compounds with volatile byproducts Metals or metal compounds without volatile byproducts Au Ni poly(p-xylylene) Pt Si Si3N4 SiO₂ Ti Various 2D Materials Various Dielectrics Various polymers PI Resist	Al AlAs AlGaAs AlGaN AlInP AlN AlSi BiFeO₃ C C C Co CoFeB Cr Cu Er Fe Ga₂O₃ GaAs GaN GaP GaPN Ge Hf HfN III-N materials III-V materials In In₂O₃ InAlN InAs InGaAlN InGaAs InGaAsN InGaN InGaP InN InP InPN InSb Ir LaB₆ LiNb Nb Ni_xO_y NiSi Pd Ru Sc SiC SiGe SiO SiON Sn SnO₂ SrO SrRuO Ta Ta₂O₅ TaN TiN V Various C-based Various polymers W WO₃ WSi₂ Y ZnO₃ Zr ZrY Alumina AZO Hafnia ITO LLZO Moly Moly Oxide Poly Silicon Ti Tungsten Titania YSZ Zirconia
Oxford Dielectric Etcher oxford-rie	Flexible	SNF Paul G Allen L107 Cleanroom	Si3N4 SiC SiO₂ PI	C
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Flexible	SNF Paul G Allen L107 Cleanroom	C Si3N4 SiC SiO₂	Various C-based