"All"

The "All" cleanliness group is part of the SNF/ExFab contamination policy.

The following is a list of equipment that fall into the "All" category.

Equipment Tables

Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Material Thickness Range	Materials Lab Supplied	Exposure Wavelength	Resist	Developer	Process Temperature Range	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
Xactix Xenon Difluoride Etcher xactix	Etching > Vapor Etching	"All"	Ge Si SiGe							N₂ XeF₂			Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	1
Woollam woollam	Characterization > Ellipsometry	"All"											Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)	1
Ultraviolet Photoresist Cure uvcure	Photolithography > Resist Bake > Oven Bake > Resist UV Cure	"All"				254 nm
SVG Resist Coat Track 2 svgcoat2	Photolithography > Resist coat > Resist Coat (automatic)	"All"					AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist						4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	25 4 inch wafers
SVG Resist Coat Track 1 svgcoat	Photolithography > Resist coat > Resist Coat (automatic)	"All"					Shipley 3612 resist SPR220-3 resist SPR220-7						4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	25 4 inch wafers
SVG Develop Track 2 svgdev2	Photolithography > Resist Develop > Resist Develop (automatic)	"All"						MF-26A developer					4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	25 4 inch wafers
SVG Develop Track 1 svgdev	Photolithography > Resist Develop > Resist Develop (automatic)	"All"						MF-26A developer					4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	25 4 inch wafers
SPTS uetch vapor etch uetch	Etching > Vapor Etching	"All"	SiO₂							C₂H₅OH HF vapor			Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	1
Sensofar S-neox s-neox	Characterization > Surface Analysis > Profilometer > Optical Profilometer Characterization > Surface Analysis > Profilometer > Interferometry	"All"											Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	1
SEM -Zeiss Merlin sem-merlin	Characterization > Surface Analysis > Microscopy > Scanning Electron Microscopy (SEM)	"All"		0.00 mm - 35.00 mm							6 in wafer		Pieces 2" 3" 4" 6" Disks	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Lithium Niobate (LiNb)	one
Reflectance Spectrometer Filmetrics F40 filmetrics	Characterization > Reflectometry	"All"													one piece or wafer
Prometrix Resistivity Mapping System prometrix	Characterization > Sheet Resistance Measurement	"All"											2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	1
PlasmaTherm Versaline HDP CVD System hdpcvd	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD	"All"		500.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON				50 °C - 150 °C	Ar N₂ O₂ SF₆ SiH₄			Pieces 4"		1
PlasmaTherm Shuttlelock PECVD System ccp-dep	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD	"All"		100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON				100 °C - 350 °C	5% SiH₄ in He CH₄ He N₂ NH₃ SF₆ Nitrous			Pieces 4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) Lithium Niobate (LiNb)	4
Oven 90°C prebake oven90	Photolithography > Resist Bake > Oven Bake > Resist Prebake	"All"							90 ºC				Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)
Oven 110°C post-bake oven110	Photolithography > Resist Bake > Oven Bake > Resist Post Bake	"All"							110 ºC				Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)
Nanospec 3 nanospec3	Characterization > Reflectometry	"All"											Pieces 2" 3" 4" 6"
Nanospec 210XP nanospec2	Characterization > Reflectometry	"All"											Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)
micromanipulator6000 IV-CV probe station micromanipulator6000	Characterization	"All"											Pieces 2" 3" 4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)	1x4" wafer
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement	"All"									8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Other (ProMCom approval required) (Various)	1 wafer(2" to 8")

"All"

Equipment Tables

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