Etching is a broad term that is used to describe the removal of material from your sample. The sub categories may be helpful for narrowing down your search, and be aware that there may be more than one technique and/or tool that could be used for your process. 

  • Dry etching uses gaseous chemistries and plasma energy to etch materials from the sample. 
  • Wet etching uses liquid chemistries to etch materials from samples. 
  • Vapor etching uses HF Vapor to etch materials. It is primarily used to etch structures that would be damaged during the rinse and dry process in a standard wet etch.
Processing Techniques Equipment name & NEMO ID Teaser Blurb Cleanliness Locationsort ascending
Reactive Ion Etching (RIE) Plasmaetch PE-50
plasma-etch

The Plasmaetch PE-50 is located in Venice, and is used primarily for surface treatment, for example with PDMS.

 Flexible SNF Exfab Paul G Allen 155A Venice
Inductively Coupled Plasma Etching (ICP) Oxford III-V etcher
Ox-35

Ox-35 is an ICP-RIE etch system configured for the etching of III-V materils and Si.

 Flexible SNF Paul G Allen L107 Cleanroom
Inductively Coupled Plasma Etching (ICP) Lam Research TCP 9400 Poly Etcher
lampoly

Lam 9400 TCP Poly Etcher ; Clean category; for poly and Si etches; maximum etch depth 3um.

 Clean, Semiclean SNF Paul G Allen L107 Cleanroom
Inductively Coupled Plasma Etching (ICP) Plasma Therm Versaline LL ICP Dielectric Etcher
PT-Ox

PT-MTL is an ICP-RIE etch system configured for the etching of silicon oxide and deep glass/quartz etching.

 Flexible SNF Paul G Allen L107 Cleanroom
Silicon Nitride Wet Etching, Wet Chemical Processing Wet Bench Clean_res- hotphos
wbclean_res-hotphos

Semi-automated wet bench for etching silicon nitride from 3", 4", and 6" Si, SiGe, and quartz substrates using 155C phosphoric acid. The baths can hold up to 25 wafers. Part of the Clean Cleanliness Group.

 Clean SNF Paul G Allen L107 Cleanroom
Vapor Etching SPTS uetch vapor etch
uetch

The SPTS uetch vapor system uses anhydrous HF and ethanol at reduced pressure and 45C to etch isotropically sacrificial silicon oxide layers, primarily to release silicon microstructures in MEMS devices.

 "All" SNF Paul G Allen L107 Cleanroom
Decontamination, Metal Clean, Piranha Cleaning, Wet Resist Removal, Acid or Base Wet Etching, Aluminum and Titanium and Tungsten Wet Etching, Silicon Wet Etching, Silicon Oxide Wet Etching, Wet Chemical Processing Wet Bench Flexcorr 1
wbflexcorr-1

Manual wet etching of non-standard materials using only SNF approved acids or bases. Hot plate available. GaAs allowed in personal labware only.

 Flexible SNF Paul G Allen L107 Cleanroom
Dry Resist Removal, Dry Etching Technics Asher
technics

Technics PE II-A is used for descum, resist strip and surface treatment with O2 plasma

 Flexible SNF Paul G Allen L107 Cleanroom
Acid or Base Wet Etching, Piranha Cleaning, Wet Chemical Processing Wet Bench Flexcorr 2
wbflexcorr-2

Manual wet etching of non-standard materials using only SNF approved acids or bases. Hot pots available. GaAs allowed in personal labware only.

 Flexible SNF Paul G Allen L107 Cleanroom
Plasma Mode Etching, Reactive Ion Etching (RIE), Downstream/Remote Plasma Resist Removal Samco PC300 Plasma Etch System
samco

The SAMCO etcher is a multifunctional etcher that can operate in either the RIE, plasma etch or Downstream plasma modes

 Flexible SNF Paul G Allen L107 Cleanroom
Aluminum and Titanium and Tungsten Wet Etching, Wet Chemical Processing Wet Bench CMOS Metal
wbclean3

Wet bench part of semiclean cleanliness group to etch Al, Ti, W, or silicon oxide from 3, 4, or 6 inch wafers. The tanks can hold up to 25 wafers.

 Semiclean SNF Paul G Allen L107 Cleanroom
Inductively Coupled Plasma Etching (ICP) Oxford Plasma Pro ICP-RIE
Ox-gen 		Flexible SNF Paul G Allen L107 Cleanroom
Silicon Oxide Wet Etching, Wet Chemical Processing Wet Bench Clean_res-hf
wbclean_res-hf

Semi-automated wet bench for etching oxide from 3", 4", and 6" Si, SiGe, and quartz substrates using 50:1 HF, 6:1BOE, or 20:1BOE. 2 baths can hold up to 25 wafers. Part of the Clean Cleanliness Group.

 Clean SNF Paul G Allen L107 Cleanroom
Inductively Coupled Plasma Etching (ICP) Oxford Plasma Pro ICP-RIE ALE
Ox-ALE

Oxford ICP-RIE Atomic Layer Etching (OX-ALE) is an Inductively Coupled Plasma (ICP) etch system designed for high-precision etching of silicon-based materials, III-V semiconductors, and 2D materials.

 Flexible SNF Paul G Allen L107 Cleanroom
Acid or Base Wet Etching, Piranha Cleaning, Wet Chemical Processing Wet Bench Flexcorr 4
wbflexcorr-4

Manual wet etching of non-standard materials using acids or bases. Hot plate, HF bath, and controlled temperature bath available. GaAs not allowed.

 Flexible SNF Paul G Allen L107 Cleanroom
Inductively Coupled Plasma Etching (ICP) Oxford Plasma Pro ICP-RIE Ox
Ox-Ox

Oxford ICP-RIE Oxide Etcher (Ox-Ox) is an Inductively Coupled Plasma (ICP) etch system optimized for high-precision etching of silicon-based materials

 Clean SNF Paul G Allen L107 Cleanroom
Acid or Base Wet Etching, Piranha Cleaning, Wet Chemical Processing Wet Bench Flexcorr 3
wbflexcorr-3

Manual wet etching of non-standard materials using acids or bases. Hot Plate available. GaAs not allowed.

 Flexible SNF Paul G Allen L107 Cleanroom
Reactive Ion Etching (RIE) MRC Reactive Ion Etcher
mrc

The MRC is a general purpose, plasma reactive ion etching system, used to etch a variety of materials, including metals, oxides, nitrides, silicons, and some organic films.

 Flexible SNF Paul G Allen L107 Cleanroom
Downstream/Remote Plasma Resist Removal, Downstream/Remote Plasma Etching Gasonics Aura Asher
gasonics

The Gasonics Aura Asher is an automated down stream microwave plasma system used for stripping photoresist of 4 inch wafers in the 'clean' cleanliness group.

 Clean, Semiclean SNF Paul G Allen L107 Cleanroom
Inductively Coupled Plasma Etching (ICP) Plasma Therm Versaline LL ICP Metal Etcher
PT-MTL

PT-MTL is an ICP-RIE etch system configured for the etching of metals and metal-based compounds with volatile bi-products

 Flexible SNF Paul G Allen L107 Cleanroom

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