Deposition

Deposition covers a wide variety of methods that are used to add a wide variety of materials. The subcategories here can be useful to help narrow down your search.

Atomic Layer Deposition (ALD) is used to deposit less than 50nm of highly conformal films.
Chemical Vapor Deposition (CVD) is used to deposit films less than 5μm thick, carbon nanotubes, and graphene.
Deposited III-N uses a type of CVD called MOCVD to deposit the nitrides of materials that are found in group III of the periodic table.
Deposited III-V uses a type of CVD called MOCVD to deposit combinations of materials from group III and group V of the periodic table.
Ink lists the equipment that can be used to print inks that are either commercially available or made by the user.
Physical Vapor Deposition (PVD) is used to deposit primarily metal layers as well as some dielectrics.

Technique Tabs

Main Tab

Processing Techniques	Equipment name & NEMO ID	Teaser Blurb	Cleanliness	Location
Low Pressure (LP) CVD	Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	LPCVD of Silicon Nitride, Stoichiometric silicon nitride, low-stress silicon nitride, Silicon Oxy Nitride.	Clean	SNF Paul G Allen L107 Cleanroom
Thermal ALD	Savannah ALD savannah		Flexible	SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD	Tystar Bank 2 Tube 7 Nitride B2T7 Flexible Nitride	LPCVD of Stoichiometric silicon nitride, low-stress silicon nitride, Silicon Oxy Nitride.	Flexible	SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD	Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	LPCVD of Low Temperatur Oxide, PSG, BSG, BPSG.	Flexible	SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD	Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	LPCVD of TEOS Oxide.	Clean	SNF Paul G Allen L107 Cleanroom
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD	Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	LPCVD of Low Temperatur Oxide, PSG, BSG, BPSG.	Clean	SNF Paul G Allen L107 Cleanroom
Plasma Enhanced (PE) CVD	PlasmaTherm Shuttlelock PECVD System ccp-dep	The Plasma-Therm Shuttlelock PECVD (CCP-Dep) system is used for depositing low-stress silicon nitride, silicon dioxide, amorphous and silicon carbide, and silicon oxynitride layers on 4 inch wafers.	"All"	SNF Paul G Allen L107 Cleanroom
Evaporation	CHA Solutions II Evaporator cha-evap	cha-evap is a non-load locked e-beam evaporator designed for higher throughput.	Flexible	SNF Paul G Allen L107 Cleanroom
Plasma Enhanced (PE) CVD	PlasmaTherm Versaline HDP CVD System hdpcvd	High Density Plasma Enhanced Chemical Vapor Deposition (HD PECVD) system is used to deposit silicon dioxide, silicon nitride and amorphous silicon.	"All"	SNF Paul G Allen L107 Cleanroom
Plasma Enhanced (PE) CVD	Oxford Plasma Pro PECVD Ox-PECVD	Ox-PECVD is dual frequnency plasma deposition system that can do silicon dioxide, amorphous, Oxynitride, silicon carbide and multi stress Nitride.	Semiclean, Flexible	SNF Paul G Allen L107 Cleanroom
Sputtering	Hummer V Sputter Coater hummer		Flexible	SNF Exfab Paul G Allen 104 Stinson

Pages

Detail Tab

Processing Technique	Equipment name & NEMO ID	Cleanliness	Materials Lab Supplied	Material Thickness Range	Substrate Size	Maximum Load (number of wafers)	Process Temperature Range	Gases	Cleaning Required	Notes
Deposition	PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Flexible	poly(p-xylylene)		Pieces 2" 3" 4" 6" 8" Cones Disks Other
Plasma Enhanced (PE) CVD	PlasmaTherm Shuttlelock PECVD System ccp-dep	"All"	Si Si3N4 SiC SiO₂ SiON	100.00 Å - 4.00 μm	Pieces 4"	4	100 °C - 350 °C	5% SiH₄ in He CH₄ He N₂ NH₃ SF₆ Nitrous		To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Plasma Enhanced (PE) CVD	PlasmaTherm Versaline HDP CVD System hdpcvd	"All"	Si Si3N4 SiC SiO₂ SiON	500.00 Å - 4.00 μm	Pieces 4"	1	50 °C - 150 °C	Ar N₂ O₂ SF₆ SiH₄		To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Thermal ALD	Savannah ALD savannah	Flexible	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 250 °C	N₂
Low Pressure (LP) CVD	Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	Flexible	Ge Si SiGe Poly Silicon	25.00 Å - 2.00 μm	4" 6"	100	420 °C - 630 °C	B₂H₆ GeH₄ N₂ PH₃ SiH₄
Low Pressure (LP) CVD	Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	Flexible	SiO₂	25.00 Å - 2.00 μm	4" 6"	100	300 °C - 500 °C	N₂ O₂ PH₃ SiH₄
Low Pressure (LP) CVD	Tystar Bank 2 Tube 7 Nitride B2T7 Flexible Nitride	Flexible	Si3N4 SiON	25.00 Å - 2.00 μm	4" 6"	50	420 °C - 800 °C	NH₃ DCS
Low Pressure (LP) CVD	Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Clean	SiO₂	25.00 Å - 2.00 μm	4" 6"	100	300 °C - 500 °C	N₂ O₂ PH₃ SiH₄
Low Pressure (LP) CVD	Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	Clean	Si3N4 SiON	25.00 Å - 2.00 μm	4" 6"	50	420 °C - 800 °C	NH₃ DCS	Pre-Diffusion Clean
Low Pressure (LP) CVD	Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	Clean	SiO₂	25.00 Å - 2.00 μm	4" 6"	50	420 °C - 630 °C	N₂ O₂ Si(OC₂H₅)₄	Pre-Diffusion Clean
Low Pressure (LP) CVD	Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	Clean	Si Poly Silicon	25.00 Å - 2.00 μm	4" 6"	50	420 °C - 630 °C	B₂H₆ GeH₄ N₂ PH₃ SiH₄	Pre-Diffusion Clean
Patterning, Ink	Voltera voltera	Flexible	Various conductive inks Various custom inks

Techniques

Deposition

Technique Tabs

Pages

Pages