Deposition covers a wide variety of methods that are used to add a wide variety of materials. The subcategories here can be useful to help narrow down your search.

  • Atomic Layer Deposition (ALD) is used to deposit less than 50nm of highly conformal films.
  • Chemical Vapor Deposition (CVD) is used to deposit films less than 5μm thick, carbon nanotubes, and graphene.
  • Deposited III-N uses a type of CVD called MOCVD to deposit the nitrides of materials that are found in group III of the periodic table.
  • Deposited III-V uses a type of CVD called MOCVD to deposit combinations of materials from group III and group V of the periodic table.
  • Ink lists the equipment that can be used to print inks that are either commercially available or made by the user.
  • Physical Vapor Deposition (PVD) is used to deposit primarily metal layers as well as some dielectrics.
Processing Techniques Equipment name & NEMO ID Teaser Blurb Cleanliness Locationsort ascending
Low Pressure (LP) CVD Tystar Bank 2 Tube 7 Nitride
B2T7 Flexible Nitride

LPCVD of Stoichiometric silicon nitride, low-stress silicon nitride, Silicon Oxy Nitride.

 Flexible SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO

LPCVD of  Low Temperatur Oxide, PSG, BSG, BPSG.

 Flexible SNF Paul G Allen L107 Cleanroom
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD AMAT Centurion Epitaxial System
epi2

Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.

 Clean SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS

LPCVD of TEOS Oxide.

 Clean SNF Paul G Allen L107 Cleanroom
Plasma Enhanced (PE) CVD PlasmaTherm Shuttlelock PECVD System
ccp-dep

The Plasma-Therm Shuttlelock PECVD (CCP-Dep) system is used for depositing low-stress silicon nitride, silicon dioxide, amorphous and silicon carbide, and silicon oxynitride layers on 4 inch wafers.

 "All" SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO

LPCVD of  Low Temperatur Oxide, PSG, BSG, BPSG.

 Clean SNF Paul G Allen L107 Cleanroom
Plasma Enhanced (PE) CVD PlasmaTherm Versaline HDP CVD System
hdpcvd

High Density Plasma Enhanced Chemical Vapor Deposition (HD PECVD) system is used to deposit silicon dioxide, silicon nitride and amorphous silicon.

 "All" SNF Paul G Allen L107 Cleanroom
Evaporation CHA Solutions II Evaporator
cha-evap

cha-evap is a non-load locked e-beam evaporator designed for higher throughput.

Flexible SNF Paul G Allen L107 Cleanroom
Plasma Enhanced (PE) CVD Oxford Plasma Pro PECVD
Ox-PECVD

Ox-PECVD is dual frequnency plasma deposition system that can do silicon dioxide, amorphous, Oxynitride, silicon carbide and multi stress Nitride. 

 Semiclean, Flexible SNF Paul G Allen L107 Cleanroom
Plasma Enhanced (PE) ALD Fiji 1 ALD
fiji1

Fiji1 is a load-locked, plasma-enabled atomic layer deposition (ALD) system.

 Semiclean SNF Paul G Allen L107 Cleanroom
Evaporation Intlvac Evaporator
Intlvac_evap 		Clean, Semiclean SNF Paul G Allen L107 Cleanroom
Sputtering Hummer V Sputter Coater
hummer 		Flexible SNF Exfab Paul G Allen L104 Stinson

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