Chemical Vapor Deposition, CVD, is a process by which films are deposited onto a substrate by the reaction between precursors at elevated temepratures and at atmomospheric or lower pressures.  Volatile precursors or their by-products are absorbed and react at the wafer surface to produce the desired films.  The  characteristics of the deposited film such as crystalinty, composition, quality, etc. are dependent on deposition conditions.  Films typically deposited using CVD processes are, but not limited to - silicon based compounds such as silicon, silicon dioxide, silicon nitride, slicon carbide, some Germanium based films and carbon based compounds. If the deposition occurs at atmospheric pressure, then the process is referred to as APCVD and if the process pressure is lower, it is LPCVD.  

Processing Technique Equipment name & NEMO ID Cleanliness Materials Lab Supplied Material Thickness Range Substrate Size Maximum Load (number of wafers) Process Temperature Range Gases Cleaning Required Notessort descending Stylus Tip Radius
Graphene CVD Growth Aixtron Black Magic graphene CVD furnace
aixtron-graphene 		Flexible
1x4" wafer or Copper/Nickel foil
800 °C - 1100 °C
Low Pressure (LP) CVD Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly 		Flexible
25.00 Å - 2.00 μm
100
420 °C - 630 °C
Low Pressure (LP) CVD Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly 		Clean
25.00 Å - 2.00 μm
50
420 °C - 630 °C
Pre-Diffusion Clean
Low Pressure (LP) CVD Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride 		Clean
25.00 Å - 2.00 μm
50
420 °C - 800 °C
Pre-Diffusion Clean
Low Pressure (LP) CVD Tystar Bank 2 Tube 7 Nitride
B2T7 Flexible Nitride 		Flexible
25.00 Å - 2.00 μm
50
420 °C - 800 °C
Low Pressure (LP) CVD Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO 		Flexible
25.00 Å - 2.00 μm
100
300 °C - 500 °C
Low Pressure (LP) CVD Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS 		Clean
25.00 Å - 2.00 μm
50
420 °C - 630 °C
Pre-Diffusion Clean
Low Pressure (LP) CVD Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO 		Clean
25.00 Å - 2.00 μm
100
300 °C - 500 °C
Plasma Enhanced (PE) CVD Oxford Plasma Pro PECVD
Ox-PECVD 		Semiclean, Flexible
100.00 Å - 4.00 μm
1
200 °C - 350 °C
Carbon Nanotube CVD Growth First Nano carbon nanotube CVD furnace
cvd-nanotube 		Flexible
1x4" wafer or multiple pieces
800 °C - 1100 °C

Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD AMAT Centurion Epitaxial System
epi2 		Clean
50.00 Å - 3.00 μm
1
600 °C - 1200 °C
Pre-Diffusion Clean

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Metal-Organic (MO) CVD Aixtron MOCVD - III-V system
aix200 		Flexible
0.00 - 5.00 μm
4"x1 wafer or 2"x1 wafer or 4 pieces
300 °C - 800 °C
Pre-Diffusion Clean

N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
Metal-Organic (MO) CVD Aixtron MOCVD - III-N system
aix-ccs 		Clean (MOCVD)
0.00 - 5.00 μm
4"x1, 2"X3, pieces
400 °C - 1300 °C

N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Plasma Enhanced (PE) CVD PlasmaTherm Versaline HDP CVD System
hdpcvd 		"All"
500.00 Å - 4.00 μm
1
50 °C - 150 °C

To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) .  Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Plasma Enhanced (PE) CVD PlasmaTherm Shuttlelock PECVD System
ccp-dep 		"All"
100.00 Å - 4.00 μm
4
100 °C - 350 °C

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run