Low Pressure Chemical Vapor Deoposition, LPCVD, is utilized in the deposition of many silicon based compounds at pressures ranging from about 0.1T to 10T and temperatures ranging from 500-900C.

Processing Techniques Equipment name & NEMO IDsort ascending Teaser Blurb Cleanliness Location
Low Pressure (LP) CVD Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly

LPCVD of Poly silicon, Amorphous Silicon, Doped Silicon.

 Clean SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS

LPCVD of TEOS Oxide.

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Low Pressure (LP) CVD Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride

LPCVD of Silicon Nitride, Stoichiometric silicon nitride, low-stress silicon nitride, Silicon Oxy Nitride.

 Clean SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO

LPCVD of  Low Temperatur Oxide, PSG, BSG, BPSG.

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Low Pressure (LP) CVD Tystar Bank 2 Tube 7 Nitride
B2T7 Flexible Nitride

LPCVD of Stoichiometric silicon nitride, low-stress silicon nitride, Silicon Oxy Nitride.

 Flexible SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO

LPCVD of  Low Temperatur Oxide, PSG, BSG, BPSG.

 Flexible SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly

LPCVD of Poly silicon, Amorphous Silicon, Doped Silicon, Silicon-Germanium.

 Flexible SNF Paul G Allen L107 Cleanroom
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD AMAT Centurion Epitaxial System
epi2

Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.

 Clean SNF Paul G Allen L107 Cleanroom