Use a CVD process to grow monolayer Graphene on Cu foil or film, and multi layer Graphene on Ni foil or film
| Processing Technique | Equipment name & NEMO ID | Cleanliness | Materials Lab Supplied | Substrate Size | Maximum Load (number of wafers) | Process Temperature Range | Gases | Stylus Tip Radius |
|---|---|---|---|---|---|---|---|---|
| Graphene CVD Growth |
Aixtron Black Magic graphene CVD furnace aixtron-graphene |
Flexible | 1x4" wafer or Copper/Nickel foil |
800 °C - 1100 °C
|