Annealing and Oxidation are processing techniques that are performed at high temperatures. Annealing is used to change the properties of a materials that are present on your sample. Oxidation done in furnaces grows the highest quality SiO2 available in the SNF.
| Processing Technique |
Equipment name & NEMO ID |
Cleanliness | Materials Lab Supplied | Material Thickness Range | Substrate Size | Maximum Load (number of wafers) | Process Temperature Range | Gases | Cleaning Required | Notes | Stylus Tip Radius |
|---|---|---|---|---|---|---|---|---|---|---|---|
| EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD |
AMAT Centurion Epitaxial System epi2 |
Clean |
50.00 Å -
3.00 μm
|
1 |
600 °C - 1200 °C
|
Pre-Diffusion Clean |
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr |
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| Rapid Thermal Annealing |
RTA AllWin 610 aw610_r |
Flexible |
21 °C - 1150 °C
|
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| Rapid Thermal Annealing |
RTA AllWin 610 aw610_l |
Clean | 1 wafer |
21 °C - 1150 °C
|
Pre-Diffusion Clean | ||||||
| Oxide Growth (furnace) |
Tystar Bank 1 Tube 1 Anneal B1T1 Flexible Oxide |
Flexible |
25.00 Å -
2.00 μm
|
100 |
400 °C - 1100 °C
|
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| Oxide Growth (furnace), Annealing (furnace) |
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide |
Flexible |
25.00 Å -
2.00 μm
|
100 |
400 °C - 1100 °C
|
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| Oxide Growth (furnace) |
Tystar Bank 2 Tube 5 B2T5 Clean Anneal |
Clean |
25.00 Å -
2.00 μm
|
100 |
400 °C - 1100 °C
|
Pre-Diffusion Clean | |||||
| Oxide Growth (furnace) |
Tystar Bank 2 Tube 6 B2T6 Clean Oxide |
Clean |
25.00 Å -
2.00 μm
|
100 |
400 °C - 1100 °C
|
Pre-Diffusion Clean | |||||
| Oxide Growth (furnace) |
Tystar Bank 3 Tube 9 B3T9 Clean Oxide |
Clean |
25.00 Å -
2.00 μm
|
100 |
400 °C - 1100 °C
|
Pre-Diffusion Clean |