Rapid Thermal Annealing (RTA or RTP) is a heated process perfomeded in an Rapid Thermal Annealer to can change material properties of a sample. Anneal parameters include temperature, ramp time, anneal time, ambient gas. Gernerally anneal times range from seconds to 30 minutes.
Because of the small chamber size and quartz lamps, the RTA can heat and cool much quicker than a furnace but can accommodate fewer samples.
| Processing Technique |
Equipment name & NEMO ID |
Cleanliness | Substrate Size | Maximum Load (number of wafers) | Process Temperature Range | Gases | Cleaning Required | Stylus Tip Radius |
|---|---|---|---|---|---|---|---|---|
| Rapid Thermal Annealing |
RTA AllWin 610 aw610_r |
Flexible |
21 °C - 1150 °C
|
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| Rapid Thermal Annealing |
RTA AllWin 610 aw610_l |
Clean | 1 wafer |
21 °C - 1150 °C
|
Pre-Diffusion Clean |