Photolithography is the process used to transfer patterns of geometric shapes to a flat substrate. The substrates are first coated with a material called resist, then light (called  photolithography) is used to catalyze reactions in the resist to create the shape of the pattern. The resist is then developed to separate the un-reacted and reacted portions, leaving a pattern on the substrate. The patterned resist can be used to pattern your material of choice with additional processes like etching or liftoff. 

The SNF has various types of equipment that use light to create patterns in the resist.

The subcategories list the equipment that perform the different steps of the lithography process.

  • ​Exposure lists the tools that will use light to create a reaction in the resist. Different tools use different light wavelengths and have different resolution capabilities.
  • Mask cleaning (Manual) is the equipment used to clean masks for use in exposure equipment which requires a physical mask.
  • Resist bake lists the equipment that heats the resist after it is applied.
  • Resist coat lists the equipment that is used to put resist on a sample.
  • Resist develop lists the equipment that uses solvents to separate the non-reacted and reacted resist after exposure.
  • Wafer preparation before resist lists the equipment that is used to treat your sample surface before the resist coat to help ensure adhesion and uniform coating.

 

Processing Technique Equipment name & NEMO ID Cleanliness Chemicals Minimum Resolutionsort descending Exposure Wavelength Substrate Size Maximum Load (number of wafers) Process Temperature Range Developer Resist Mask Size Notes Stylus Tip Radius
Resist Coat (manual) Headway Manual Resist Spinner
headway2
"All" one piece or wafer

Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists

Resist Develop (manual), Wet Chemical Processing Wet Bench Miscellaneous
wbmiscres
Flexible

Manual development of resist in beakers and Headway (manual resist spinner). SNF approved developers (acid or base). No solvents!

Resist Develop (automatic) SVG Develop Track 1
svgdev
"All"
25 4 inch wafers

Automatic development.

Resist Coat (manual) Laurell Manual Resist Spinner
laurell-R
"All"

SU-8, LOL, Ebeam resists allowed. No Acetone allowed. 

Resist Spray Coat (manual) EVG 101 Spray Coater
evgspraycoat
"All" 1

Spray coating of resists

Resist Coat (automatic) SVG Resist Coat Track 1
svgcoat
"All"
25 4 inch wafers

Automatic Resist spinning and bake

Resist UV Cure Ultraviolet Photoresist Cure
uvcure
"All" 254 nm
Wafer Prime (HMDS), Singe HMDS Vapor Prime Oven, YES
yes
"All"
150 ºC

Two programs: Singe and HMDS prime or Singe only. No Resist allowed!

Oven Bake Oven (White)
white-oven
Flexible
0 °C - 200 °C

For LOL2000 bake or bakes which are not allowed in the other ovens and need higher temperatures, up to 200C, programmable.

Oven Bake Oven BlueM 200°C to 430°C
bluem
Flexible
0 °C - 430 °C

Convection in N2. Cure. Programmable.

Resist Post Bake Oven 110°C post-bake
oven110
"All"
110 ºC

Bakes wafers with resist after the development, called post-bake.

Resist Prebake Oven 90°C prebake
oven90
"All"
90 ºC

Bakes wafers after resist coating.

Resist Coat (automatic) SVG Resist Coat Track 2
svgcoat2
"All"
25 4 inch wafers

Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.

Resist Develop (automatic) SVG Develop Track 2
svgdev2
"All"
25 4 inch wafers

Automatic development.

Resist Coat (manual) Headway 3 Manual Resist Spinner
headway3
"All" 1 piece or wafer
Resist Develop (manual), Wet Chemical Processing Ex Fab Develop Wet Bench
wbexfab_dev
Flexible

Manual development of resist in beakers. SNF approved developers only. No solvents!

Wafer Prime (HMDS) HMDS Vapor Prime Oven, YES2
yes2
"All" 25
150 ºC

Singe and prime. No Resist allowed!

Stepper ASML PAS 5500/60 i-line Stepper
asml
"All" 0.45 μm 365 nm
5 inch

5:1 reducing stepper

Direct Write Heidelberg MLA 150 - 2
heidelberg2
"All" 0.60 μm 375 nm 1

Direct Write

Direct Write Heidelberg MLA 150
heidelberg
"All" 1.00 μm 405 nm 1

Direct Write

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