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Physical Vapor Deposition (PVD)

PVD is characterized by a process in which the material goes from a condensed phase to a vapor phase and then back to a thin film condensed phase. The most common PVD processes are sputtering and evaporation.

Technique Tabs

Main Tab

Processing Techniques	Equipment name & NEMO ID	Teaser Blurb	Cleanliness	Location
Evaporation	AJA Evaporator aja-evap		Flexible	SNF Exfab Paul G Allen 155A Venice
Evaporation	AJA2 Evaporator aja2-evap	This E-beam evaporator can evaporate a variety of metals (no oxides) onto your substrates. It has an integrated ion mill for substrate precleaning.	Flexible	SNF Cleanroom Paul G Allen L107
Sputtering	Hummer V Sputter Coater hummer		Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
Evaporation	Intlvac Evaporator Intlvac_evap		Clean, Semiclean	SNF Cleanroom Paul G Allen L107
Sputtering	Lesker Sputter lesker-sputter		Flexible	SNF Exfab Paul G Allen 155A Venice
Sputtering	Lesker2 Sputter lesker2-sputter		Semiclean	SNF Cleanroom Paul G Allen L107

Detail Tab

Processing Technique	Equipment name & NEMO ID	Cleanliness	Materials Lab Supplied	Material Thickness Range	Substrate Size	Maximum Load (number of wafers)	Process Temperature Range	Gases	Notes
Evaporation	AJA Evaporator aja-evap	Flexible	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti Titania	0.00 - 300.00 nm	Pieces 2" 3" 4" 6"	4"x3 or 6"x1 wafers or pieces			For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Evaporation	AJA2 Evaporator aja2-evap	Flexible	Ag Al Au Cr Cu Ni Pd Pt Si Ti	0.00 - 300.00 nm	Pieces 2" 3" 4" 6"	4"x3 or 6"x1 wafers or pieces			For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
Sputtering	Hummer V Sputter Coater hummer	Flexible
Evaporation	Intlvac Evaporator Intlvac_evap	Clean, Semiclean	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly	0.00 - 0.50 μm	Pieces 2" 3" 4" 6"	12 4 inch wafers, 2 6 inch wafers
Sputtering	Lesker Sputter lesker-sputter	Flexible	Ag Al AlSi Au Co Cr Cu Fe Nb Ni Pd Si SiO₂ Ta Ti TiN W Alumina ITO		Pieces 2" 3" 4" 6"	1 4 inch wafer, 1 6 inch wafer			reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Sputtering	Lesker2 Sputter lesker2-sputter	Semiclean	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly	1.00 μm	Pieces 2" 3" 4" 6"	one 4 inch wafer, one 6 inch wafer	°C - 800 °C	Ar N₂ O₂	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter